BFP740ESDH6327XTSA1 by Infineon Technologies

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BFP740ESDH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFP740ESDH6327XTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
Datasheet

Datasheet

284 In Stock

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BFP740ESDH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	45000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.045 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM CARBON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.16 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	C BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Minimum Power Gain (Gp):	14.5 dB
Other Names:	BFP 740ESD H6327CT-ND BFP740ESDH6327XTSA1TR BFP740ESDH6327XTSA1CT BFP 740ESD H6327 BFP 740ESD H6327CT BFP 740ESD H6327TR-ND BFP 740ESD H6327TR BFP 740ESD H6327DKR BFP 740ESD H6327DKR-ND SP000785486 BFP740ESDH6327 BFP740ESDH6327XTSA1DKR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	160
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	4.2 V
Maximum Collector-Base Capacitance:	.8 pF

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