Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,055	$0.144	$152.342

50A02SP

Manufacturer

Onsemi
Manufacturer's Part Number

50A02SP
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 690 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: THROUGH-HOLE;
Datasheet

Datasheet

1055 In Stock

Popular Products

SS14

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;

Details

BAV99

Kingwell Technonlogy

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Thinking Electronic Industrial

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Wuxi Xuyang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

Details

LL4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BAV99

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

L78L05ABZ-AP

STMicroelectronics

L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.

Details

1N4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS495A-SP

Honeywell Sensing And Control

SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.

Details

BAT54SLT1G

Onsemi

BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.

Details

BAV99

Philips Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Vicor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Diotec Semiconductor Ag

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

Details

KSZ9031RNXIA

Microchip Technology

KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.

Details

M85049/85-08W02

TE Connectivity

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;

Details

M39029/56351

Souriau-sunbank Connection Technologies

Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.

Details

BAV99

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

50A02SP Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	690 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	NO
Terminal Finish:	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE

Category Top Products

C-33

ROHM

ROHM C-33 is an NPN BJT transistor for amplifier applications. Features include VCEsat of 0.4V, Gp of 15dB, and hFE of 20. Operating at up to 150°C, it has a fT of 1000MHz and can handle IC up to 0.05A in the UHF band.

BFR92AT/R

NXP Semiconductors

NXP Semiconductors' BFR92AT/R is an NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 5000MHz, and hFE of 40. This small outline package transistor operates up to 150°C and can handle a max collector-emitter voltage of 15V.

SD1143-1

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;

MPSH17RL

Onsemi

MPSH17RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for amplifier applications in the very high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. The transistor operates at a max temperature of 150 °C, making it suitable for various RF signal amplification needs.

KSC1393R

Onsemi

KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.

934064614115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .03 A; Terminal Form: FLAT;

HFA3101BZ

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;

BFR96

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .075 A; Qualification: Not Qualified;

MPS3563

Onsemi

MPS3563 by Onsemi is an NPN RF BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05A and Ptot of 0.625W, making it suitable for ultra-high frequency amplifier applications. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

2N5109

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 20 V; Transistor Element Material: SILICON;

2SC4399-3

Onsemi

RF Small Signal Bipolar Transistors;

2N2369A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;

3N35

Texas Instruments

3N35 by Texas Instruments is a NPN BJT transistor with 4 terminals, operating at 150°C. It has a max collector-emitter voltage of 30V and a transition frequency of 150MHz. Ideal for amplifier applications in the very high-frequency band due to its 0.125W power dissipation capability.

TIS111

Texas Instruments

TIS111 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and max current of 0.8A, ideal for switching applications. With a max power dissipation of 0.36W and transition frequency of 350MHz, it operates at up to 150°C making it suitable for various RF small signal tasks.

3003

Microsemi

Microsemi's 3003 is an NPN BJT transistor for RF amplification in S Band applications. With a max operating temp of 200°C, it has a 0.6A collector current and comes in a ceramic-metal package with flat terminals for surface mount assembly.

HFA3046BZ96

Intersil

HFA3046BZ96 by Intersil is an NPN RF BJT with 5 elements and 14 terminals. It operates in the ultra-high frequency band up to 8V, with a transition frequency of 8000MHz. Ideal for amplifier applications, it has a max operating temperature of 150°C and is surface mountable.

HFA3096BZ96

Renesas Electronics

HFA3096BZ96 by Renesas Electronics is a RF BJT with NPN and PNP channels, 5 elements, and 8000 MHz fT. It's used for amplification in the UHF band, has 16 terminals, and is surface mountable. The package is small outline with gull wing terminals made of silicon material.

934067697235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

BF224RL

Onsemi

BF224RL by Onsemi is a NPN RF BJT with 30V VCEO, 850MHz fT, and 0.05A IC. Ideal for very high frequency applications in electronics due to its single configuration and through-hole terminal form. Operating at up to 150 °C, it is commonly used in RF amplifiers and oscillators.

FFB3946

Onsemi

The Onsemi FFB3946 is a RF BJT transistor with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max voltage of 40V and max current of 0.2A. Operating up to 150 °C, it offers a transition frequency of 200MHz for efficient performance.