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QTY	Unit Price	Ext Price
7,724	$0.093	$719.104

MPSH10

Manufacturer

Onsemi
Manufacturer's Part Number

MPSH10
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
Datasheet

Datasheet

7724 In Stock

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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CRCW04020000Z0EDHP

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Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.

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ULN2803A

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NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

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LM107H/883

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OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N2222A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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SMBJ18CA

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBRA340T3G

Onsemi

MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.

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LM317LMX/NOPB

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ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

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USB3320C-EZK-TR

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Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

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FDC5614P

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FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

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LM317T

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Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

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IRLML6402TRPBF

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IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

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MBRS360T3G

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MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.

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LL4148

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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MPSH10 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Maximum Collector-Base Capacitance:	.7 pF
Peak Reflow Temperature (C):	235

Category Top Products

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BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.

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MPSH11ZL1 by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and a transition frequency of 650MHz. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.

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BFR193FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, max collector current of 0.08A, and transition frequency of 8000MHz. Ideal for amplifier circuits in automotive electronics due to AEC-Q101 compliance.

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STMicroelectronics' MSC82001 is a NPN BJT transistor with 2 terminals, ideal for L Band applications. It has a max power dissipation of 7W and max collector current of 0.2A, making it suitable for amplifier circuits in high-frequency settings. The package style is flange mount with a ceramic-metal sealed co-fired body material.

MMBTH81

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CS9018

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Onsemi's 2SC5227A-5-TB-E is an NPN RF BJT with max power dissipation of 0.2W, hFE of 135, and fT of 5000MHz. Ideal for high-frequency applications in electronics due to its small signal capabilities and surface-mount configuration.

934064609115

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BSX93

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BSX93 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36W, operates up to 200 °C, and has a nominal transition frequency of 650MHz. Ideal for compact electronic circuits requiring efficient signal control.

Bulk

MPSH10

7724 In Stock

Popular Products

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NDT2955

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CRCW04020000Z0EDHP

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MBRA340T3G

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FDC5614P

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MBRS360T3G

LL4148

MPSH10 Technical Details

Category Top Products

2N2368

2SC5415AE-TD-E

BFP620FE7764

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MSC82001

MMBTH81

BF959RL

CS9018

BFY90

2SC5227A-5-TB-E

934064609115

BSX93

BFY90

NE85634-T1-A

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15GN03FA-TL-H

JANTXV2N2907A

JANTX2N2907A