NSVF4009SG4T1G by Onsemi

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NSVF4009SG4T1G

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    NSVF4009SG4T1G
  • Description
    NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .04 A;
  • Datasheet

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NSVF4009SG4T1G Technical Details

TYPE DESCRIPTION
Nominal Transition Frequency (fT): 25 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .04 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 4
Maximum Power Dissipation (Abs): .12 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .12 W
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e6
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 3.5 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260

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