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NSVF4009SG4T1G

Manufacturer

Onsemi
Manufacturer's Part Number

NSVF4009SG4T1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .04 A;
Datasheet

Datasheet

1519 In Stock

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NSVF4009SG4T1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	25 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.04 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.12 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.12 W
Moisture Sensitivity Level (MSL):	1
Other Names:	NSVF4009SG4T1GOSCT NSVF4009SG4T1GOSDKR NSVF4009SG4T1GOSTR NSVF4009SG4T1G-ND
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	50
JESD-609 Code:	e6
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	3.5 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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