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NSVF4009SG4T1G
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ManufacturerOnsemi
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Manufacturer's Part NumberNSVF4009SG4T1G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .04 A;
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Datasheet
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DetailsNSVF4009SG4T1G Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 25 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .04 A |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Surface Mount: | YES |
Terminal Finish: | TIN BISMUTH |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | .12 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Highest Frequency Band: | L BAND |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | .12 W |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 50 |
JESD-609 Code: | e6 |
Minimum Operating Temperature: | -55 Cel |
Maximum Collector-Emitter Voltage: | 3.5 V |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | 260 |