Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,132	Request Pricing	-

934061142115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934061142115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; Case Connection: EMITTER;
Datasheet

Datasheet

3132 In Stock

Popular Products

LM555CM

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

ECA2DHG4R7

Panasonic

ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.

Details

ERJ6ENF10R0V

Panasonic

Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.

Details

AB26TRB-32.768KHZ--T

Abracon

AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

BAV99

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;

Details

1N4148WS

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Unitrode

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

BSS138

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SS14

Leshan Radio

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Forward Voltage (VF): .5 V;

Details

2N7002

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;

Details

STM32H753IIT6

STMicroelectronics

STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.

Details

LL4148

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FT232RL-REEL

FTDI

FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.

Details

SMBJ18CA

Transpro Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;

Details

LM107H

Intersil

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;

Details

MBR130T1G

Onsemi

MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

Details

934061142115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	70000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.04 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
No. of Terminals:	4
Maximum Collector-Emitter Voltage:	2.8 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	LOW NOISE
Highest Frequency Band:	C BAND
Case Connection:	EMITTER

Category Top Products

MPSH10RL1

Onsemi

MPSH10RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It has a max Vce of 25V and fT of 650MHz, making it suitable for ultra-high frequency applications in cylindrical packages.

MMBTH10LT1

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;

BFS17SH6327XTSA1

Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

934067695135

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30;

934064959115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;

FMB3946

Onsemi

FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.

MMPQ2369R1

Onsemi

MMPQ2369R1 by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It features a max fT of 550 MHz, VCE of 15V, and IC of 0.5A. The transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.

BFR93ARGELB-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

934067697235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

BF959ZL1G

Onsemi

BF959ZL1G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 20V and fT of 700MHz. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates in the very high-frequency band. This through-hole transistor has a min hFE of 35 and can handle up to 0.1A collector current.

BFY90

Baneasa S A

RF Small Signal Bipolar Transistors; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Package Body Material: METAL; Package Shape: ROUND;

BFP650FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

MPSH17G

Onsemi

The Onsemi MPSH17G is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pd of 0.625W, suitable for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, ideal for high-speed circuit designs.

HFA3127B

Intersil

Intersil's HFA3127B is an NPN BJT transistor with 5 elements, ideal for amplifier applications in the ultra-high frequency band. With a max fT of 8000 MHz and IC of 0.037 A, this transistor features a Gull Wing terminal form and small outline package style for surface mount assembly.

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

BSX93

STMicroelectronics

BSX93 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36W, operates up to 200 °C, and has a nominal transition frequency of 650MHz. Ideal for compact electronic circuits requiring efficient signal control.

2N3866

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

LM3046MX

Texas Instruments

LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.

LM3046MX/NOPB

Texas Instruments

LM3046MX/NOPB by Texas Instruments is a NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it suitable for amplifier applications. With a max power dissipation of 0.75W and operating temperature of 85°C, it offers reliable performance in small outline packages.

BFR92A

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Package Shape: RECTANGULAR;