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MSC82302

Manufacturer

STMicroelectronics
Manufacturer's Part Number

MSC82302
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .3 A; Terminal Form: FLAT; Package Shape: ROUND;
Datasheet

Datasheet

3218 In Stock

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1N4148WT

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WSF-7

Diodes Incorporated

1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.

Details

BSS138

Weitron Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

Details

2N2222A

Vishay Sprague

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;

Details

2N2222A

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

M24308/2-1F

Souriau

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;

Details

M39029/58-360

Amphenol

CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;

Details

LL4148

Secos

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM358DR2G

Onsemi

LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.

Details

SS14

Silicon Standard

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;

Details

1N4148

Shenzhen Yixinsemi Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SN65HVD230DR

Texas Instruments

SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.

Details

MURS160T3G

Onsemi

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

Details

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

Details

1N4148

Taiwan Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

Details

BAV99

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM555CN

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

LM107H/883

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

MSC82302 Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	.3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	30
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	RADIAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-CRFM-F2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	200 Cel
Maximum Collector-Base Capacitance:	3.5 pF
Case Connection:	BASE

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BFR92PE6327XT

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BFR92PE6327XT by Infineon Technologies is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a collector-emitter voltage of 15V and can handle a max collector current of 0.045A, making it suitable for switching applications in the L band frequency range. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

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BFS20,215

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BFR92A

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; JESD-609 Code: e3;

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RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

MPSH10

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

55GN01CA-TB-EX

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55GN01CA-TB-EX by Onsemi is an NPN RF BJT with a max fT of 5500 MHz. It has a max Vce of 10V and Ic of 0.07A, making it ideal for C Band amplifier applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at temperatures up to 150 °C.

BFP183E7764HTSA1

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2N3866A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

2N5109

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2N5109 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 0.4A, ideal for amplifier applications in the very high frequency band up to 1200MHz. Its package style is cylindrical with a metal body material and wire terminals, featuring a single configuration design.

BFP196WH6327XTSA1

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BFP196WH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 7500 MHz, and max collector current of 0.15A. This small outline package transistor is designed for amplifier circuits in automotive electronics meeting AEC-Q101 standards.

NSVF4017SG4T1G

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NSVF4017SG4T1G by Onsemi is a NPN BJT transistor with 4 terminals, operating in X Band frequency range up to 10GHz. It has a max power dissipation of 0.45W and can handle collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 compliance.

BFR93A

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-G3;

BFR35APE6327HTSA1

Infineon Technologies

BFR35APE6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 15V VCEO, 0.045A IC, and 5000MHz fT. Ideal for L Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.

2N4104

Texas Instruments

2N4104 by Texas Instruments is an NPN BJT with 400 min hFE, 0.05A IC, and 90MHz fT. Ideal for amplifier applications due to its 0.3W power dissipation and SILICON material. Its ROUND package with WIRE terminals makes it suitable for RF signal amplification in various electronic devices.

Bulk

MSC82302

3218 In Stock

Popular Products

1N4148WT

1N4148WSF-7

BSS138

2N2222A

2N2222A

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M39029/58-360

LL4148

LM358DR2G

SS14

BSS138

1N4148

SN65HVD230DR

MURS160T3G

FDC5614P

1N4148

BAV99

2N2222A

LM555CN

LM107H/883

MSC82302 Technical Details

Category Top Products

BFR98

BFR92PE6327XT

934065992115

BFS20,215

BFR92A

934063513115

934067693115

MPSH10

55GN01CA-TB-EX

BFP183E7764HTSA1

2N3866A

2N5109

BFP196WH6327XTSA1

NSVF4017SG4T1G

BFR93A

BFR35APE6327HTSA1

2N4104

JANTXV2N2907AL

934067704235

HFA3102BZ