Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4,130	Request Pricing	-

2N4260

Manufacturer

Texas Instruments
Manufacturer's Part Number

2N4260
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1.6 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;
Datasheet

Datasheet

4130 In Stock

Popular Products

CRCW080510K0FKEA

Vishay Intertechnology

Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.

Details

1N4148WS

Weitron Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SN65HVD234DR

Texas Instruments

SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.

Details

ABS10-32.768KHZ-T

Abracon

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

Details

2N2222A

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM555CN

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

BAV99

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CRCW04020000Z0EDHP

Vishay Intertechnology

Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.

Details

NDT2955

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM107H

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

SS14

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/56-351

Carlisle Interconnect Technologies

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;

Details

LM107H/883C

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;

Details

1N4148WS

Rochester Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

2N4260 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	1.6 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.03 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
JEDEC-95 Code:	TO-72
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	30
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	2.5 pF
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

BFR93AW

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .09 A;

MMBTH81LT1

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

LM3046M/NOPB

Texas Instruments

LM3046M/NOPB by Texas Instruments is an NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high-frequency band up to 550MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and operating temperature of 85°C, it offers reliable performance in various electronic circuits.

MPSH10

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

NSVMMBTH81LT1G

Onsemi

NSVMMBTH81LT1G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high-frequency band with a max fT of 600 MHz. With a VCEsat of 0.5V and hFE of 60, it offers efficient performance in small outline packages.

CA3146E

Intersil

Intersil's CA3146E is a NPN BJT with 5 elements, 14 terminals, and fT of 500 MHz. It operates in the VHF band as an amplifier with max IC of 0.05 A and VCE of 30V. The transistor is housed in a plastic/epoxy package with through-hole terminals for RF applications.

SD1143-1

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;

BFP620FH7764XTSA1

Infineon Technologies

BFP620FH7764XTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max fT of 65 GHz. It features a collector-emitter voltage of 2.3V and a collector current of 0.08A, making it suitable for high-frequency amplifier applications in the C band. This small outline package transistor has 4 terminals and complies with AEC-Q101 standards.

2N5109

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .5 A;

MCH4015-TL-H

Onsemi

MCH4015-TL-H by Onsemi is a NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 10GHz and can handle a collector-emitter voltage of 12V. Ideal for X band applications, this transistor offers a max power dissipation of 0.45W in a small outline package.

2N4401

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: ROUND; No. of Elements: 1;

2N3570

Texas Instruments

2N3570 by Texas Instruments is a NPN BJT transistor with 4 terminals, 0.05A IC, and 1500MHz fT. Ideal for amplifier applications in the ultra high frequency band, it has a max operating temperature of 175°C and 0.2W power dissipation.

MPS3640

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;

LM3086M

National Semiconductor

LM3086M by National Semiconductor is a NPN BJT with 5 elements, hFE of 40, and fT of 550 MHz. It is used in amplifier applications for the very high frequency band. The transistor has a max operating temp of 85°C, VCE of 15V, and IC of 0.05A in a small outline package with Gull Wing terminals.

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

934064609115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: KU BAND;

A5T3571

Texas Instruments

A5T3571 by Texas Instruments is an NPN BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 20 and a nominal transition frequency of 1200 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. The package style is cylindrical with a plastic/epoxy body material and wire terminals.

934055191115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 470 MHz; Maximum Collector Current (IC): .025 A; Moisture Sensitivity Level (MSL): 1;

MPSH10RLRA

Onsemi

MPSH10RLRA by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.35W and fT of 650MHz. Ideal for amplifier applications, it operates in the ultra-high frequency band and has a max collector-emitter voltage of 25V.

SD1891-03

STMicroelectronics

SD1891-03 by STMicroelectronics is a NPN BJT with 15V VCEO, 1.1A IC, and 8.8W Ptot. Ideal for L Band applications, this transistor has a hFE of 15 and operates up to 200 °C. Its ceramic-metal package with flat terminals makes it suitable for flange mount configurations.