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MPSH10

Manufacturer

Samsung
Manufacturer's Part Number

MPSH10
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
Datasheet

Datasheet

Not In Stock

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MPSH10 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.04 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1 W
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Maximum Collector-Base Capacitance:	.7 pF
Maximum VCEsat:	.5 V

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