BFQ256AT/R by NXP Semiconductors

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BFQ256AT/R

  • Manufacturer
    NXP Semiconductors
  • Manufacturer's Part Number
    BFQ256AT/R
  • Description
    PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
  • Datasheet

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BFQ256AT/R Technical Details

TYPE DESCRIPTION
Nominal Transition Frequency (fT): 1200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 2 W
Maximum Collector-Emitter Voltage: 95 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 175 Cel
Maximum Collector-Base Capacitance: 1.6 pF
Case Connection: COLLECTOR

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