BFQ256AT/R by NXP Semiconductors

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BFQ256AT/R

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFQ256AT/R
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;
Datasheet

Datasheet

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BFQ256AT/R Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	1200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	20
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	2 W
Maximum Collector-Emitter Voltage:	95 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	HIGH RELIABILITY
Maximum Operating Temperature:	175 Cel
Maximum Collector-Base Capacitance:	1.6 pF
Case Connection:	COLLECTOR

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