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START420

Manufacturer

STMicroelectronics
Manufacturer's Part Number

START420
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .04 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
Datasheet

Datasheet

4561 In Stock

Popular Products

2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;

Details

DS18B20Z

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;

Details

LL4148

Kec

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM358N

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SMBJ18CA

General Instrument

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

Details

LL4148GS08

Temic Semiconductors

LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.

Details

1N4148

Nte Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM317T/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;

Details

EU2B-YS3103F

Idec

ROTARY SWITCH;

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NDT2955

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

ULN2803ADW

Texas Instruments

ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.

Details

1N4148WT

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

STM32F407VGT6

STMicroelectronics

STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).

Details

ULN2803A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

Details

LL4148

Panjit International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148-GS08

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

RC0603JR-070RL

Yageo

Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.

Details

START420 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.04 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	4.5 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOW NOISE
Highest Frequency Band:	C BAND
Case Connection:	EMITTER

Category Top Products

MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.

HFA3127B

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Terminal Form: GULL WING;

BFU550R

NXP Semiconductors

The NXP Semiconductors BFU550R is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L band. It features a max operating temperature of 150°C, a transition frequency of 11 GHz, and a collector-emitter voltage of 16V. This small outline transistor has Gull Wing terminals and can handle up to 0.05A collector current.

FH105A-TR-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

BFP196WH6327XTSA1

Infineon Technologies

BFP196WH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 7500 MHz, and max collector current of 0.15A. This small outline package transistor is designed for amplifier circuits in automotive electronics meeting AEC-Q101 standards.

MPS3563ZL1

Onsemi

MPS3563ZL1 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical and is ideal for RF signal amplification.

BF959RL1

Onsemi

BF959RL1 by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 1.5W, and fT of 700MHz. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 20V and max. operating temp. of 150°C.

BFQ256AT/R

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

JANS2N3866AUB

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.9 W; Maximum Collector Current (IC): .4 A; Package Style (Meter): SMALL OUTLINE;

NESG260234-T1-AZ

Nec Compound Semiconductor Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 7.2 V; Transistor Element Material: SILICON;

BFG540/X,215

NXP Semiconductors

NXP Semiconductors' BFG540/X,215 is a NPN RF BJT with 4 terminals in a small outline package. It operates in L Band with fT of 9000 MHz and can handle 0.12 A collector current. Ideal for amplifier applications, it has a max power dissipation of 0.5 W at 150°C ambient temperature.

SD1012-4

STMicroelectronics

NPN; Surface Mount: YES; JESD-609 Code: e0; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb);

BFR93AW

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;

2N2907AUBC

Vpt Components

RF Small Signal Bipolar Transistors;

BFQ253

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; Package Style (Meter): CYLINDRICAL;

2N5109

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; Qualification: Not Qualified;

BFS17PE6327HTSA1

Infineon Technologies

Infineon's BFS17PE6327HTSA1 is an NPN RF BJT for amplifiers in the UHF band. With a max fT of 2500 MHz, it has a hFE of 40 and can handle up to 15V VCE. The transistor comes in a small outline package with gull wing terminals, making it suitable for high-frequency applications.

Bulk

START420

4561 In Stock

Popular Products

2N2222A

DS18B20Z

LL4148

LM358N

SMBJ18CA

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EU2B-YS3103F

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BAV99

NDT2955

ULN2803ADW

1N4148WT

STM32F407VGT6

ULN2803A

LL4148

LL4148-GS08

RC0603JR-070RL

START420 Technical Details

Category Top Products

MSD2714AT1

HFA3127B

BFU550R

FH105A-TR-E

BFP196WH6327XTSA1

MPS3563ZL1

BF959RL1

BFQ256AT/R

JANS2N3866AUB

NESG260234-T1-AZ

BFG540/X,215

SD1012-4

BFR93AW

2N2907AUBC

BFQ253

2N5109

BFS17PE6327HTSA1

MPS6507RL

2N2222A

BFQ255