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MSD2714AT1

Manufacturer

Onsemi
Manufacturer's Part Number

MSD2714AT1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector-Emitter Voltage: 25 V;
Datasheet

Datasheet

1900 In Stock

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MSD2714AT1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	BIP RF Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	90
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.225 W
Maximum Collector-Emitter Voltage:	25 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance:	.7 pF
Peak Reflow Temperature (C):	235
Moisture Sensitivity Level (MSL):	1

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