Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,968	Request Pricing	-

3N35

Manufacturer

Texas Instruments
Manufacturer's Part Number

3N35
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .02 A;
Datasheet

Datasheet

1968 In Stock

Popular Products

SMBJ18CA

Pulse Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Intersil

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

EU2B-YS2J03F

Idec

ROTARY SWITCH;

Details

2N2222A

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

Details

1N4148WS

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358MX

Texas Instruments

LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.

Details

LM358DT

STMicroelectronics

LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.

Details

TCA6424ARGJR

Texas Instruments

TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.

Details

LM107H

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

M39029/56-351

Itt Cannon

CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;

Details

1N4148WT

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NC7WZ17P6X

Fairchild Semiconductor

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

Details

LL4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BSS138

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);

Details

LL4148

Transys Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N2222A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;

Details

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

Details

2N7002

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;

Details

BAV99

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Hy Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

3N35 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	150 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.02 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-12
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.125 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED

Category Top Products

LM3146N

National Semiconductor

LM3146N by National Semiconductor is an NPN BJT with 5 elements and 14 terminals. It operates in the very high-frequency band up to 500 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 30V and max collector current of 0.05A, it offers complex configuration in a rectangular package suitable for through-hole mounting.

BFR93AW-E6327

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 3;

MSC82001

STMicroelectronics

STMicroelectronics' MSC82001 is a NPN BJT transistor with 2 terminals, ideal for L Band applications. It has a max power dissipation of 7W and max collector current of 0.2A, making it suitable for amplifier circuits in high-frequency settings. The package style is flange mount with a ceramic-metal sealed co-fired body material.

MSC2295-CT1

Onsemi

The Onsemi MSC2295-CT1 is an NPN RF BJT transistor with a max operating temp of 150 °C. It has a min hFE of 110 and max fT of 150 MHz, making it ideal for amplifier applications. With a small outline package style and Gull Wing terminals, it's suitable for surface mount designs.

934065992115

NXP Semiconductors

RF Small Signal Bipolar Transistors;

BFP840ESDH6327XTSA1

Infineon Technologies

BFP840ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for C Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 80 MHz, it offers high performance in a small outline package.

2SC4853A-4-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6;

BF959RL1

Onsemi

BF959RL1 by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 1.5W, and fT of 700MHz. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 20V and max. operating temp. of 150°C.

JANTXV2N2907AL

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; Peak Reflow Temperature (C): NOT SPECIFIED;

MMBTH10-7-F

Diodes Incorporated

MMBTH10-7-F by Diodes Inc. is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a small outline package, operates up to 150°C, and features a max power dissipation of 0.3W.

BF495

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;

KSP10TA

Onsemi

The Onsemi KSP10TA is an NPN BJT transistor with a max power dissipation of 0.35W and a transition frequency of 650MHz. It is ideal for applications requiring ultra high frequency band operation, such as RF signal amplification in electronic devices.

2N3866A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

2N5109

Texas Instruments

2N5109 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 0.4A, ideal for amplifier applications in the very high frequency band up to 1200MHz. Its package style is cylindrical with a metal body material and wire terminals, featuring a single configuration design.

MSC81002

STMicroelectronics

STMicroelectronics' MSC81002 is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in L Band frequencies. With a max power dissipation of 6.3W and max collector current of 0.2A, it operates at up to 200 °C, featuring a ceramic-metal package body and silicon element material.

2SA1857

Onsemi

The Onsemi 2SA1857 is a PNP RF BJT transistor with VCEsat of 0.3V, hFE of 60, and fT of 750MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector-emitter voltage of 12V.

MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.

PN5179/D26Z

National Semiconductor

PN5179/D26Z by National Semiconductor is an NPN BJT transistor with VCEsat of 0.4V, Gp of 15dB, and fT of 900MHz. Ideal for amplifier applications in the very high-frequency band due to its silicon element material and 12V max collector-emitter voltage. The package is cylindrical with a plastic/epoxy body, through-hole terminals, and a single configuration.

MMBTH81_NL

Fairchild Semiconductor

MMBTH81_NL by Fairchild Semiconductor is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, DC current gain of 60 (hFE), and operates at temperatures up to 150°C. This surface-mount transistor features a small outline package with gull wing terminals.

MPS3563RLRE

Onsemi

MPS3563RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a VCEO of 12V, and IC of 0.05A. Ideal for amplifier applications in the UHF band, it features a plastic/epoxy package with through-hole terminals.