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BFU550R

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFU550R
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

4943 In Stock

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BFU550R Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	11000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.45 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	568-11515-1 934067704215 568-11515-6 568-11515-2 BFU550R-ND
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	16 V
Additional Features:	LOW NOISE
Maximum Collector-Base Capacitance:	.72 pF
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

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