MPS3563ZL1 by Onsemi

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,299	Request Pricing	-

MPS3563ZL1

Manufacturer

Onsemi
Manufacturer's Part Number

MPS3563ZL1
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 3;
Datasheet

Datasheet

2299 In Stock

Popular Products

BAV99

Kec

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Forward International Electronics

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;

Details

1N4148

Philips Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

Details

BSS84-7-F

Diodes Incorporated

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.

Details

1N4148WS

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Hitachi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;

Details

BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Transys Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM358MX

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LM555CM

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

2N7002

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;

Details

BAV99

Silicon Standard

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MPS3563ZL1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Additional Features:	EUROPEAN PART NUMBER
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	1.7 pF

Category Top Products

CPH6001A-TL-E by Onsemi

CPH6001A-TL-E

Onsemi

CPH6001A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W, hFE of 90, and fT of 5000MHz. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations at temperatures up to 150°C.

MMBTH10 by Onsemi

MMBTH10

Onsemi

MMBTH10 by Onsemi is an NPN RF BJT transistor with a max fT of 650 MHz. It's a single configuration amplifier in a small outline package, suitable for ultra-high frequency applications. With a max operating temp of 150°C and Pdiss of 0.225W, it's ideal for high-frequency circuit designs.

AT-42035G by Broadcom

AT-42035G

Broadcom

AT-42035G by Broadcom is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 8 GHz and can handle a collector current of 0.08 A, making it suitable for C band amplifier applications in microwave packages.

BFR520TT/R by NXP Semiconductors

BFR520TT/R

NXP Semiconductors

NXP Semiconductors' BFR520TT/R is a NPN RF BJT transistor with 9000 MHz fT. It's a single configuration amplifier for L Band applications, featuring 0.07 A IC and Gull Wing terminals. This small outline package has a plastic body, tin finish, and can withstand peak reflow at 260°C for up to 40s.

BFR93AE6327HTSA1 by Infineon Technologies

BFR93AE6327HTSA1

Infineon Technologies

BFR93AE6327HTSA1 by Infineon Technologies is a NPN RF BJT with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.3W, hFE of 70, and fT of 6000MHz. This transistor operates at up to 150°C and features a collector-emitter voltage of 12V.

MMBTH10LT1G by Onsemi

MMBTH10LT1G

Onsemi

MMBTH10LT1G by Onsemi is an NPN RF transistor with a max operating temperature of 150°C. It has a small outline package style and can handle a max collector-emitter voltage of 25V. This transistor is commonly used in ultra high frequency band applications.

BFW17A by STMicroelectronics

BFW17A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .15 A;

15GN03MA-TL-E by Onsemi

15GN03MA-TL-E

Onsemi

15GN03MA-TL-E by Onsemi is a NPN RF BJT with 0.4W power dissipation, hFE of 100, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.07A in surface-mount configurations at temperatures up to 150°C.

MPSA10RLRAG by Onsemi

MPSA10RLRAG

Onsemi

MPSA10RLRAG by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for ultra-high frequency applications due to its low capacitance and high frequency band capabilities.

MCH6001-TL-E by Onsemi

MCH6001-TL-E

Onsemi

MCH6001-TL-E by Onsemi is an NPN BJT with 2 elements, suitable for RF applications. Features include fT of 16 MHz, hFE of 60, and VCE max of 8V. Ideal for ultra-high frequency band circuits requiring a small outline package and flat terminals.

934056631215 by NXP Semiconductors

934056631215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

MPS3563RLRAG by Onsemi

MPS3563RLRAG

Onsemi

MPS3563RLRAG by Onsemi is an NPN RF BJT with a max fT of 1500 MHz, ideal for amplifier applications. It has a max IC of 0.05A and operates at up to 150 °C. The package is cylindrical with through-hole terminals, suitable for ultra-high frequency band circuits.

D2T918 by Texas Instruments

D2T918

Texas Instruments

D2T918 by Texas Instruments is an NPN BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It has a min hFE of 20, max VCE of 15V, and IC of 0.05A. The package is cylindrical with 6 terminals and isolated case connection.

MPSH10RLRM by Onsemi

MPSH10RLRM

Onsemi

MPSH10RLRM by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Its package is cylindrical, suitable for ultra-high frequency applications at up to 150 °C operating temperature. Ideal for RF amplification in communication systems.

BFR360FH6765XTSA1 by Infineon Technologies

BFR360FH6765XTSA1

Infineon Technologies

BFR360FH6765XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14 GHz. It has a collector-emitter voltage of 6V and collector current of 0.035A, making it suitable for amplifier applications in the S band. This surface-mount transistor comes in a small outline package with 3 terminals.

MCH4020-TL-H by Onsemi

MCH4020-TL-H

Onsemi

The Onsemi MCH4020-TL-H is an NPN RF BJT with a max power dissipation of 0.4W, fT of 13GHz, and hFE of 60. Ideal for high-frequency applications in surface-mount configurations, it operates up to 150°C with a max collector current of 0.15A.

KSP10TA by Onsemi

KSP10TA

Onsemi

The Onsemi KSP10TA is an NPN BJT transistor with a max power dissipation of 0.35W and a transition frequency of 650MHz. It is ideal for applications requiring ultra high frequency band operation, such as RF signal amplification in electronic devices.

2N5583 by Space Power Electronics

2N5583

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 30 V;

934055891115 by NXP Semiconductors

934055891115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Transistor Element Material: SILICON;

AT-42035G by Agilent Technologies

AT-42035G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .08 A;