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2SC4399

Manufacturer

Onsemi
Manufacturer's Part Number

2SC4399
Description

RF Small Signal Bipolar Transistors;
Datasheet

Datasheet

2180 In Stock

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2N2222A

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SS14

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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LM358M

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2N2222A

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BFP720H6327XTSA1

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2N2222

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BFQ256A-T

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CA3083M

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MPSH10

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;

BF776H6327XTSA1

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Infineon's BF776H6327XTSA1 is a NPN BJT transistor for ultra-high frequency amplification. With 4 terminals, it operates at max 150°C and has a fT of 46GHz. Its plastic package with gull wing terminals makes it suitable for surface mount applications.

HFA3135IHZ96

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2SC4399-5

Onsemi

RF Small Signal Bipolar Transistors;

TIS110

Texas Instruments

TIS110 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.36W and max collector-emitter voltage of 40V, it operates at up to 150°C. Featuring a nominal transition frequency of 350MHz, it is housed in a cylindrical package suitable for RF small signal amplification.

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

JANS2N3866AUB

Defense Logistics Agency

JANS2N3866AUB by Defense Logistics Agency is an NPN RF BJT with 3.5 pF max collector-base capacitance, 30V max collector-emitter voltage, and 0.4A max collector current. Ideal for ultra-high frequency band amplification applications due to its ceramic-metal-sealed co-fired package body material and small outline package style.

A5T3571

Texas Instruments

A5T3571 by Texas Instruments is an NPN BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 20 and a nominal transition frequency of 1200 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. The package style is cylindrical with a plastic/epoxy body material and wire terminals.

BFQ256AT/R

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

HFA3127RZ

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HFA3127RZ by Renesas Electronics is a NPN RF BJT with 5 elements, ideal for amplifier applications. It operates in the ultra high frequency band up to 8V and has a transition frequency of 8000 MHz. This chip carrier package features separate configuration with matte tin finish, suitable for surface mount assembly.

CA3083Z

Renesas Electronics

CA3083Z by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450 MHz, with a max collector-emitter voltage of 15V and collector current of 0.1A. The package style is in-line, with a max power dissipation of 0.5W at 150°C.