Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,369	Request Pricing	-

MPS3640

Manufacturer

International Devices
Manufacturer's Part Number

MPS3640
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
Datasheet

Datasheet

3369 In Stock

Popular Products

2N2222A

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

C0805C104K5RACTU

KEMET Corporation

KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.

Details

2N7002

Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

Details

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

Details

2N2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BSS138K-13

Diodes Incorporated

BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.

Details

LAN8720A-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

350766-1

TE Connectivity

TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.

Details

KSZ9031RNXIC

Microchip Technology

KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.

Details

LM317T/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;

Details

LL4148

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

Details

SMBJ18CA

Thinking Electronic Industrial

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Harris Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

LL4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

M39029/58-360

Amphenol

CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;

Details

1552200168

Molex

WIRE AND CABLE;

Details

C1206C104K5RACTU

KEMET Corporation

KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.

Details

TCA6424ARGJR

Texas Instruments

TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.

Details

MPS3640 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	500 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.08 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-226AA
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	30
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.625 W
Maximum Collector-Emitter Voltage:	12 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	3.5 pF

Category Top Products

MMBT918LT1

Onsemi

MMBT918LT1 by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and operates up to 150 °C, making it suitable for ultra-high frequency amplifier applications in small outline packages.

BF224RLRA

Onsemi

BF224RLRA by Onsemi is a NPN BJT with max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating at 150 °C, it has fT of 850MHz, suitable for RF applications in very high frequency band due to its cylindrical package style.

BFP720H6327XTSA1

Infineon Technologies

BFP720H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, max. collector-emitter voltage of 4V, and fT of 45GHz. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier circuits.

BFR93AW

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;

BFR92ALT1

National Semiconductor

BFR92ALT1 by National Semiconductor is an NPN RF BJT with a max power dissipation of 0.273W, min hFE of 40, and max IC of 0.025A. It's used in surface mount applications for its silicon element material and tin/lead terminal finish.

3001

Microsemi

Microsemi 3001 is an NPN BJT transistor for amplifier applications. Features include S band frequency, max operating temp of 200°C, and 0.2A collector current. Its ceramic-metal package with flange mount shape makes it suitable for RF signal amplification in various electronic devices.

CPH6021-TL-H

Onsemi

CPH6021-TL-H by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.

SD1134

STMicroelectronics

SD1134 by STMicroelectronics is an NPN RF BJT transistor with a max power dissipation of 5W and max collector current of 0.75A. It operates in the ultra-high frequency band, suitable for applications requiring high-frequency signal amplification in radial terminal configurations.

CA3086M

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 15 V;

SD1438-2

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);

MPSH10RLRP

Onsemi

MPSH10RLRP by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.35W and operates in the ultra-high frequency band.

MPSA10RLRA

Onsemi

MPSA10RLRA by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high operating temp (150 °C). The transistor's through-hole package makes it suitable for various cylindrical-shaped devices.

2N5583

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

934067711235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

2N3866

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Maximum VCEsat: 1 V;

MRF237

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W3;

15GN03CA-TB-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;

2SC5490A-TL-H

Onsemi

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;

BFU790F,115

NXP Semiconductors

NXP Semiconductors' BFU790F,115 is an NPN RF BJT with a max power dissipation of 0.234W and min hFE of 235. Ideal for surface mount applications, it has a max IC of 0.1A making it suitable for high-frequency signal amplification in various electronic devices.

BFR93AW-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;