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EMX5T2R

Manufacturer

ROHM
Manufacturer's Part Number

EMX5T2R
Description

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

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EMX5T2R Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	3200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN COPPER
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.15 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	EMX5T2R-ND EMX5T2RTR EMX5T2RCT EMX5T2RDKR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	27
JESD-609 Code:	e2
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	11 V
Maximum Collector-Base Capacitance:	1.55 pF
Peak Reflow Temperature (C):	260

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