BFU760F,115 by NXP Semiconductors

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU760F,115

  • Manufacturer
    NXP Semiconductors
  • Manufacturer's Part Number
    BFU760F,115
  • Description
    NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 155;
  • Datasheet

Not In Stock

Please provide a valid Quantity between 1 and 1000,000,000.
Please provide a valid Email Address.

Popular Products

BFU760F,115 Technical Details

TYPE DESCRIPTION
Maximum Collector Current (IC): .07 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON GERMANIUM
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 155
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .22 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1

Category Top Products