Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
911	$0.155	$141.068

2SC5231A-8-TL-E

Manufacturer

Onsemi
Manufacturer's Part Number

2SC5231A-8-TL-E
Description

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;
Datasheet

Datasheet

911 In Stock

Popular Products

2N7002

Samsung

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

Details

1N4148

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

Details

1N4148

North American Philips Discrete Products Div

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);

Details

2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;

Details

M39029/56351

Esterline Technologies

CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;

Details

1N4148

Compensated Devices

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

Details

LL4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

RC0805FR-0710RL

Yageo

Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.

Details

1N4148WT

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

STM32F405RGT6

STMicroelectronics

STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.

Details

SMBJ18CA

Shenzhen Socay Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58-360

Molex

CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;

Details

BSS123NH6327XTSA1

Infineon Technologies

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.

Details

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.

Details

LM317T

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

Details

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

MBRS130LT3G

Onsemi

MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.

Details

2SC5231A-8-TL-E Technical Details

TYPE	DESCRIPTION
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
Moisture Sensitivity Level (MSL):	1

Category Top Products

START499ETR

STMicroelectronics

START499ETR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.6 W, operates up to 150 °C, and supports frequencies in the C band with a transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

MMBTH69LT1

Onsemi

MMBTH69LT1 by Onsemi is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the UHF band. It has a max collector-emitter voltage of 15V and fT of 2000MHz. This surface-mount transistor features a plastic/epoxy body, gull wing terminals, and low collector-base capacitance at 0.35pF.

BFR92AW-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;

BFP420H6327XTSA1

Infineon Technologies

Infineon's BFP420H6327XTSA1 is an NPN RF BJT transistor with a max fT of 25 GHz. It is ideal for X Band applications, featuring a max VCE of 4.5V and IC of 0.035A. The transistor operates in temperatures as low as -65°C and complies with AEC-Q101 standards.

MPSH10

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE;

KSC1674R-C

Onsemi

Onsemi's KSC1674R-C is an NPN BJT for RF applications. It features a VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for ultra-high frequency amplification in through-hole packages with 3 terminals.

BFT92

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .045 A;

NSVMMBTH10LT1G

Onsemi

NSVMMBTH10LT1G by Onsemi is an NPN RF BJT with 650MHz fT, 60 hFE, and 0.3W Pd. Ideal for high-frequency applications in surface-mount configurations due to its 150°C max operating temp and matte tin terminal finish.

KSC1393Y

Onsemi

The Onsemi KSC1393Y is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 90, and operates in the very high frequency band up to 700 MHz. With a max collector-emitter voltage of 30V and power dissipation of 0.25W, it is suitable for high-frequency amplification tasks.

BFR520TT/R

NXP Semiconductors

NXP Semiconductors' BFR520TT/R is a NPN RF BJT transistor with 9000 MHz fT. It's a single configuration amplifier for L Band applications, featuring 0.07 A IC and Gull Wing terminals. This small outline package has a plastic body, tin finish, and can withstand peak reflow at 260°C for up to 40s.

TIS108

Texas Instruments

TIS108 by Texas Instruments is an NPN BJT transistor with a max power dissipation of 0.25W and max collector current of 0.05A, ideal for amplifier applications in the very high frequency band. With a min DC current gain of 25 and nominal transition frequency of 3.5MHz, it operates at temperatures up to 150°C in a cylindrical package with wire terminals.

NE85633-T1B-A

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

934063144215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2800 MHz; Maximum Collector Current (IC): .025 A; Transistor Application: AMPLIFIER;

934055892115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; JESD-30 Code: R-PDSO-G3;

2SC4399-4

Onsemi

RF Small Signal Bipolar Transistors;

JANTX2N3866A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

PN5179/D26Z

National Semiconductor

PN5179/D26Z by National Semiconductor is an NPN BJT transistor with VCEsat of 0.4V, Gp of 15dB, and fT of 900MHz. Ideal for amplifier applications in the very high-frequency band due to its silicon element material and 12V max collector-emitter voltage. The package is cylindrical with a plastic/epoxy body, through-hole terminals, and a single configuration.

Bulk

2SC5231A-8-TL-E

911 In Stock

Popular Products

2N7002

1N4148

2N7002

1N4148

2N2222A

M39029/56351

1N4148

LL4148

RC0805FR-0710RL

1N4148WT

STM32F405RGT6

SMBJ18CA

1N4148WS

BAV99

M39029/58-360

BSS123NH6327XTSA1

MMBT3904-7-F

LM317T

FDN306P

MBRS130LT3G

2SC5231A-8-TL-E Technical Details

Category Top Products

START499ETR

MMBTH69LT1

BFR92AW-GS08

BFP420H6327XTSA1

MPSH10

KSC1674R-C

BFT92

NSVMMBTH10LT1G

KSC1393Y

BFR520TT/R

TIS108

NE85633-T1B-A

934063144215

934055892115

2SC4399-4

JANTX2N3866A

PN5179/D26Z

MMBR5031LT1

2N3866A

HFA3135IHZ96