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Bulk
| QTY | Unit Price | Ext Price |
| 1,723 | $0.031 | $54.016 |
MMBTH10
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ManufacturerChangzhou Galaxy Century Microelectronics
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Manufacturer's Part NumberMMBTH10
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
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Datasheet
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DetailsMMBTH10 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 650 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .05 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .35 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .35 W |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 60 |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Collector-Emitter Voltage: | 25 V |
| Maximum Collector-Base Capacitance: | .7 pF |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | .5 V |
