MMBTH10 by Changzhou Galaxy Century Microelectronics

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MMBTH10

Manufacturer

Changzhou Galaxy Century Microelectronics
Manufacturer's Part Number

MMBTH10
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

1723 In Stock

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MMBTH10 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.35 W
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	25 V
Maximum Collector-Base Capacitance:	.7 pF
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.5 V

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