HFA3102BZ96 by Renesas Electronics

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

HFA3102BZ96

Manufacturer

Renesas Electronics
Manufacturer's Part Number

HFA3102BZ96
Description

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

Not In Stock

Popular Products

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

SMBJ18CA

Rectron

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Positronic Industries

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

SS14

Rfe International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM107H

General Electric Solid State

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;

Details

87832-1420

Molex

87832-1420 by Molex is a 14-contact board connector with 0.079" pitch, suitable for commercial applications. It features matte tin over nickel finish, glass-filled polyamide insulator, and polarization key for easy assembly. Withstanding voltage of 1400VAC and operating temperature range from -55 to 105°C make it reliable for various electronic devices.

Details

1N4148

Terry Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

OHN3140U

Tt Electronics Plc

OHN3140U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 2mT. It features an output range of 25mA and operates b/w -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields in various industries.

Details

LM555CMX

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BAV99

Secos

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;

Details

BAV99

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358MX

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LM107H

Intersil

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;

Details

DS18B20Z

Dallas Semiconductor

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;

Details

1N4148WT

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Minimum Input-Output Voltage Differential: 3 V;

Details

1N4148

National Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

HFA3102BZ96 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	10000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.03 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	14
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G14
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	85 Cel
Moisture Sensitivity Level (MSL):	3
JEDEC-95 Code:	MS-012AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	8 V
Maximum Collector-Base Capacitance:	300 pF
Peak Reflow Temperature (C):	260

Category Top Products

2N3643 by General Diode

2N3643

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

LM3046MX by Texas Instruments

LM3046MX

Texas Instruments

LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.

MPS918RLRE by Onsemi

MPS918RLRE

Onsemi

MPS918RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates in the ultra-high frequency band and has a max collector-emitter voltage of 15V. Ideal for amplifier applications, it features a plastic/epoxy package body and can handle up to 0.05A collector current at 150 °C.

2N2222 by Electronic Transistors

2N2222

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

2N3114 by Texas Instruments

2N3114

Texas Instruments

2N3114 by Texas Instruments is a NPN BJT transistor for RF applications. With max. power dissipation of 0.8W, it operates in the very high frequency band up to 40MHz. Ideal for amplifier circuits, it has a max. collector-emitter voltage of 150V and max. collector current of 0.2A.

BFR92 by STMicroelectronics

BFR92

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

AT-41511-TR1G by Agilent Technologies

AT-41511-TR1G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER; Additional Features: HIGH RELIABILITY;

CA3086M96 by Renesas Electronics

CA3086M96

Renesas Electronics

CA3086M96 by Renesas Electronics is a NPN BJT transistor with 6 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it ideal for amplifier applications. This complex transistor has a max collector-emitter voltage of 15V and collector current of 0.05A, suitable for surface mount configurations in small outline packages.

CA3146E by Intersil

CA3146E

Intersil

Intersil's CA3146E is a NPN BJT with 5 elements, 14 terminals, and fT of 500 MHz. It operates in the VHF band as an amplifier with max IC of 0.05 A and VCE of 30V. The transistor is housed in a plastic/epoxy package with through-hole terminals for RF applications.

BFP183E7764HTSA1 by Infineon Technologies

BFP183E7764HTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

FMB3946 by Onsemi

FMB3946

Onsemi

FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.

MPS918RL1 by Onsemi

MPS918RL1

Onsemi

MPS918RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. Operating at up to 150 °C, it has a max collector current of 0.05A and low collector-base capacitance of 3pF.

MPS3640 by Crimson Semiconductor

MPS3640

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;

CA3146E by Rochester Electronics

CA3146E

Rochester Electronics

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER;

NE85634-T1-A by Nec Electronics

NE85634-T1-A

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Base Capacitance: 1 pF;

CA3086M by Harris Semiconductor

CA3086M

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 15 V;

2N3904 by Thomson-csf Semiconductors

2N3904

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified; Terminal Position: BOTTOM;

MPS6507RL1 by Onsemi

MPS6507RL1

Onsemi

MPS6507RL1 by Onsemi is an NPN RF BJT with 20V VCEO, 2.5pF CBC, and 800MHz fT. Ideal for amplifier applications, it has a max operating temp of 150 °C. This through-hole transistor comes in a cylindrical package with tin-lead finish.

FH105A-TR-E by Onsemi

FH105A-TR-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

934056691115 by NXP Semiconductors

934056691115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .015 A; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;