Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BF240

Manufacturer

Onsemi
Manufacturer's Part Number

BF240
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .025 A; Package Shape: ROUND;
Datasheet

Datasheet

Not In Stock

Popular Products

1N4148

Baneasa S A

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WSF-7

Diodes Incorporated

1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.

Details

LL4148

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BAV99

Siemens

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

General Instrument

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Taiwan Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;

Details

2N2222A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Shandong Yiguang Electronic Joint Stock

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM107H/883

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

Details

1N4148WS

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Inchange Semiconductor

Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;

Details

M39029/56351

Souriau-sunbank Connection Technologies

Souriau-sunbank's M39029/56351 is a CRIMP contact type backshell accessory compliant with MIL-DTL-38999. It features FEMALE gender contacts, compatible with M39029/58363 mating contacts. The insertion and removal tools required are M81969/14-10 and M22520/2-10 respectively, making it ideal for military connector applications.

Details

SS14

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

BAV99

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BF240 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Surface Mount:	NO
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	40 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Collector-Base Capacitance:	.34 pF

Category Top Products

BFR360L3E6765XTMA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: GOLD;

BFT92

NXP Semiconductors

The NXP Semiconductors BFT92 is a PNP RF BJT transistor with 3 terminals, suitable for ultra-high frequency band applications. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. Ideal for amplifier circuits in small outline packages requiring high-frequency performance.

2N5109

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .4 A; JESD-609 Code: e0;

BSX28

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

MSC80196

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT;

55GN01CA-TB-E

Onsemi

55GN01CA-TB-E by Onsemi is an NPN BJT transistor with a max fT of 5500 MHz. It has a max IC of 0.07 A and hFE of 100, ideal for amplifier applications in C band frequencies. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for high-frequency RF designs.

934063144215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2800 MHz; Maximum Collector Current (IC): .025 A; Transistor Application: AMPLIFIER;

CA3086

Intersil

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;

MMBTH10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

START450

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

BFS17

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

MPSH17RLRM

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Transistor Application: AMPLIFIER; Maximum Collector-Base Capacitance: .9 pF;

BFQ256ATRL

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .3 A; JESD-609 Code: e3;

BFQ19SH6327XTSA1

Infineon Technologies

Infineon's BFQ19SH6327XTSA1 is a NPN BJT transistor for L Band applications. With max fT of 5500 MHz, it has VCE of 15V and IC of 0.21A. This single configuration transistor operates b/w -65°C to 150°C, making it suitable for amplifier circuits in RF applications.

2N3114

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .2 A;

SD1420

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.75 W; Maximum Collector Current (IC): .25 A; Package Body Material: PLASTIC/EPOXY;

BFR93AR

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

BFS483H6327XTSA1

Infineon Technologies

Infineon's BFS483H6327XTSA1 is a NPN BJT transistor with 2 elements, ideal for amplifier applications in L Band frequencies. With a max fT of 8000 MHz and IC of 0.065 A, it features a collector-emitter voltage of 12 V. This small outline package has 6 terminals and matte tin finish.

MMBTH10LT3G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .3 W; Moisture Sensitivity Level (MSL): 1;

BFT92W

Siemens

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;