BFR840L3RHESDE6327XTSA1 by Infineon Technologies

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BFR840L3RHESDE6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFR840L3RHESDE6327XTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75000 MHz; Maximum Collector Current (IC): .035 A; Highest Frequency Band: X BAND;
Datasheet

Datasheet

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BFR840L3RHESDE6327XTSA1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	75000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.035 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Terminal Finish:	GOLD
JESD-609 Code:	e4
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	2.25 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Highest Frequency Band:	X BAND
Reference Standard:	AEC-Q101
Case Connection:	EMITTER
Moisture Sensitivity Level (MSL):	1

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