BFR840L3RHESDE6327XTSA1 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
151	$0.151	$22.809

BFR840L3RHESDE6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFR840L3RHESDE6327XTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75000 MHz; Maximum Collector Current (IC): .035 A; Highest Frequency Band: X BAND;
Datasheet

Datasheet

151 In Stock

Popular Products

BSS138

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

Details

BAV99

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

ISO1050DUBR

Texas Instruments

ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.

Details

BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Good-ark Electronics

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;

Details

LM358N

STMicroelectronics

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

TCA6424ARGJR

Texas Instruments

TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.

Details

1N4148

Hy Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Bytesonic Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

TE Connectivity

TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.

Details

LM78L05ACMX/NOPB

Texas Instruments

LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.

Details

1N4148WS

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

AT90CAN128-16AU

Microchip Technology

AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.

Details

EU2B-YS2J03C

Idec

ROTARY SWITCH;

Details

1N4148

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Multicomp Pro

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

FDC5614P

TAIZHOU ELECTRONICS CO LTD

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

Details

LL4148

Rectron

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BFR840L3RHESDE6327XTSA1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	75000 MHz
Other Names:	SP000978848 BFR840L3RHESDE6327XTSA1CT BFR840L3RHESDE6327XTSA1TR BFR840L3RHESDE6327XTSA1DKR INFINFBFR840L3RHESDE6327XTSA1 2156-BFR840L3RHESDE6327XTSA1
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.035 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Terminal Finish:	GOLD
JESD-609 Code:	e4
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	2.25 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Highest Frequency Band:	X BAND
Reference Standard:	AEC-Q101
Case Connection:	EMITTER
Moisture Sensitivity Level (MSL):	1

Category Top Products

2SC2814-4

Onsemi

The Onsemi 2SC2814-4 is an NPN RF BJT transistor with a max fT of 320 MHz. It has a max IC of 0.03 A and hFE of 90, suitable for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, operating up to 125 °C.

2N3866

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

BFU760F,115

NXP Semiconductors

The NXP Semiconductors BFU760F,115 is an NPN RF BJT with a max power dissipation of 0.22W and min DC current gain of 155. It is ideal for surface mount applications in circuits requiring a max collector current of 0.07A, featuring silicon germanium transistor element material and tin terminal finish.

BF199

Onsemi

BF199 by Onsemi is a NPN BJT transistor for RF applications. With hFE of 40, it operates at up to 150 °C with fT of 750 MHz. Ideal for amplification in very high frequency bands, it has a max IC of 0.1A and VCE of 25V in a cylindrical package.

MSC81118

STMicroelectronics

STMicroelectronics' MSC81118 is an NPN BJT transistor with a max power dissipation of 6.3W, ideal for amplifier applications in L Band frequencies. Featuring a min hFE of 15 and max IC of 0.2A, this transistor operates at up to 200 °C with a collector-base capacitance of 3.2pF.

MPSH10

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

934063132115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;

BFU520AR

NXP Semiconductors

The NXP Semiconductors BFU520AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It operates in L Band with a transition frequency of 10 GHz and can handle a max collector-emitter voltage of 12V. The package is surface mountable, featuring Gull Wing terminals and a small outline shape.

MSC2295-BT1G

Onsemi

MSC2295-BT1G by Onsemi is a NPN BJT transistor for RF applications. With hFE of 70, it operates at 150 °C max temperature and has fT of 150 MHz. Ideal for amplifier circuits due to its small outline package and low collector current of 0.03 A.

NESG260234-T1-AZ

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;

MPSH10RL1

Onsemi

MPSH10RL1 by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It has a max Vce of 25V and fT of 650MHz, making it suitable for ultra-high frequency applications in cylindrical packages.

2N3866

Solid State Devices

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Terminal Position: BOTTOM;

2N2222A

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MSC81002

STMicroelectronics

STMicroelectronics' MSC81002 is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in L Band frequencies. With a max power dissipation of 6.3W and max collector current of 0.2A, it operates at up to 200 °C, featuring a ceramic-metal package body and silicon element material.

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

SS9018GBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.

MPSH10RLRM

Onsemi

MPSH10RLRM by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Its package is cylindrical, suitable for ultra-high frequency applications at up to 150 °C operating temperature. Ideal for RF amplification in communication systems.

MMPQ2369

Onsemi

The Onsemi MMPQ2369 is a NPN RF BJT with 4 elements, ideal for amplifier applications. It has a hFE of 40, fT of 550 MHz, and can handle up to 0.5A collector current. With a max operating temperature of 150 °C and peak reflow temp of 235°C, it's suitable for high-frequency circuits in small outline packages.

BFY90

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-72;