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MMBTH10LT3G
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ManufacturerOnsemi
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Manufacturer's Part NumberMMBTH10LT3G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .3 W; Moisture Sensitivity Level (MSL): 1;
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Datasheet
2009 In Stock
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DetailsMMBTH10LT3G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 650 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | MMBTH10LT3GOSDKR MMBTH10LT3GOSCT ONSONSMMBTH10LT3G MMBTH10LT3GOSTR 2156-MMBTH10LT3G-OS MMBTH10LT3G-ND |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 60 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 25 V |
| Maximum Collector-Base Capacitance: | .7 pF |
| Peak Reflow Temperature (C): | 260 |
