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BFY90

Manufacturer

Baneasa S A
Manufacturer's Part Number

BFY90
Description

RF Small Signal Bipolar Transistors; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Package Body Material: METAL; Package Shape: ROUND;
Datasheet

Datasheet

9563 In Stock

Popular Products

1N4148WT

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N7002

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

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1N4148

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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SS495ASP

Micro Switch

The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.

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BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Details

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

Details

2N7002

Comchip Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;

Details

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

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LL4148

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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1N4148

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Itt Components

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

Details

LM555CMX

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

NDT2955

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

Details

BAV99

Infineon Technologies

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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LM358N

Taejin Technology

OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

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1N4148W-T

Micro Commercial Components

1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.

Details

FDD5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;

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BAV99

Panasonic

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358AN

NXP Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

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LAN8720AI-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

BFY90 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
No. of Terminals:	4
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
Package Shape:	ROUND
Terminal Form:	WIRE
Surface Mount:	NO

Category Top Products

BFP640ESDH6327XTSA1

Infineon Technologies

BFP640ESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and 45000MHz fT. It is used in X Band amplifiers for high-frequency applications. The package is a small outline with gull wing terminals and AEC-Q101 standard compliance.

2N3866A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

BFU760F,115

NXP Semiconductors

The NXP Semiconductors BFU760F,115 is an NPN RF BJT with a max power dissipation of 0.22W and min DC current gain of 155. It is ideal for surface mount applications in circuits requiring a max collector current of 0.07A, featuring silicon germanium transistor element material and tin terminal finish.

BFR106,215

NXP Semiconductors

NXP Semiconductors' BFR106,215 is a NPN RF BJT transistor with 3 terminals and max. power dissipation of 0.5W. It operates in the ultra-high frequency band at 5000MHz, ideal for amplifier applications. The small outline package with gull wing terminals makes it suitable for surface mount designs in various CECC standard circuits.

HFA3046BZ

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;

934067702235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

934067707215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

HFA3127BZ

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JEDEC-95 Code: MS-012AC;

BF224ZL1

Onsemi

BF224ZL1 by Onsemi is a NPN BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for RF applications in the very high frequency band due to its SILICON transistor element and cylindrical package style. Operates at up to 150 °C with through-hole terminals for easy installation.

BFY90

Baneasa S A

RF Small Signal Bipolar Transistors; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: WIRE; Package Body Material: METAL; Package Shape: ROUND;

934055055115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .25 A; Case Connection: EMITTER;

BFR93AW

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1; Transistor Element Material: SILICON;

SMA540B

STMicroelectronics

SMA540B by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, a nominal transition frequency of 42GHz, and comes in a compact surface mount package. Ideal for L-band signal amplification.

FMB3946

Onsemi

FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.

2N3643

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

MMPQ2369G

Onsemi

MMPQ2369G by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 15V, fT of 550MHz, and IC of 0.5A. The transistor is surface mountable with a small outline package and Gull Wing terminals.

NE662M04-T2-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-F4;

HFA3127B

Intersil

Intersil's HFA3127B is an NPN BJT transistor with 5 elements, ideal for amplifier applications in the ultra-high frequency band. With a max fT of 8000 MHz and IC of 0.037 A, this transistor features a Gull Wing terminal form and small outline package style for surface mount assembly.

BFY90

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Transistor Element Material: SILICON;

BFP520H6327XTSA1

Infineon Technologies

BFP520H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating in L Band up to 45GHz. It has a max power dissipation of 0.1W and max collector-emitter voltage of 2.5V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 standard compliance.