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NSVF6003SB6T1G

Manufacturer

Onsemi
Manufacturer's Part Number

NSVF6003SB6T1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A;
Datasheet

Datasheet

1944 In Stock

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NSVF6003SB6T1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	7000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	NSVF6003SB6T1GOSCT NSVF6003SB6T1GOSTR NSVF6003SB6T1GOSDKR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e6
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	12 V
Maximum Collector-Base Capacitance:	2 pF
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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