Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

HFA3102BZ

Manufacturer

Renesas Electronics
Manufacturer's Part Number

HFA3102BZ
Description

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Datasheet

Datasheet

Not In Stock

Popular Products

2N7002

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

DS18B20Z/T&R

Maxim Integrated

DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.

Details

M24308/2-1F

Cinch Connectivity Solutions

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;

Details

1N4148

Laube Technology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148W-T

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Hy Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

Details

1N4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Diotec Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LAN8720A-CP-TR

Microchip Technology

LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.

Details

1N4148

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;

Details

1554216004

Molex

WIRE AND CABLE;

Details

1N4148

Semitron

RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;

Details

TM4C1294NCPDTI3

Texas Instruments

TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.

Details

1N4148WS

Multicomp Pro

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317T

Samsung

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;

Details

1N4148

Crimson Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

M24308/2-1F

Defense Logistics Agency

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;

Details

FT232RL-TUBE

FTDI

FTDI's FT232RL-TUBE is a bus controller with 28 terminals, operating at 3.3-5.25V. It supports USB, VBUS, and UART interfaces with a data transfer rate of 60MBps. Ideal for industrial applications requiring RS232/RS422/RS485 compatibility in compact designs due to its small outline package style.

Details

HFA3102BZ Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	10000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.03 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	14
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G14
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	85 Cel
Moisture Sensitivity Level (MSL):	3
JEDEC-95 Code:	MS-012AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	8 V
Maximum Collector-Base Capacitance:	300 pF
Peak Reflow Temperature (C):	260

Category Top Products

JANS2N2907AUB

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel; Reference Standard: MIL-19500;

NE85633-T1B-A

Renesas Electronics

NE85633-T1B-A by Renesas Electronics is a NPN BJT transistor for RF applications. It operates in the ultra high frequency band with a transition frequency of 7000 MHz. This single configuration transistor has a max collector-emitter voltage of 12V and is suitable for amplifier circuits in small outline packages.

JANTX2N2907AUB

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3;

MPS5179ZL1

Onsemi

MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.

JANTXV2N2907AL

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; Peak Reflow Temperature (C): NOT SPECIFIED;

BFQ255A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;

MPSH10RLRP

Onsemi

MPSH10RLRP by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.35W and operates in the ultra-high frequency band.

NESG260234-T1

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

934061234115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

PBR951,215

NXP Semiconductors

NXP Semiconductors PBR951,215 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 8 GHz and has a max power dissipation of 0.365 W. Ideal for amplifier applications, it can handle a max collector-emitter voltage of 10V at an operating temp of 175°C.

BFU520VL

NXP Semiconductors

NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

MMBTH81D87Z

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

3003

Microsemi

Microsemi's 3003 is an NPN BJT transistor for RF amplification in S Band applications. With a max operating temp of 200°C, it has a 0.6A collector current and comes in a ceramic-metal package with flat terminals for surface mount assembly.

BFS17SH6327XTSA1

Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

2N3866

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

KSC1674O

Onsemi

KSC1674O by Onsemi is an NPN RF BJT with a max VCEsat of 0.3V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 600MHz, and can handle a max IC of 0.02A.

START499TR

STMicroelectronics

START499TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and operating temp up to 150 °C. It supports ultra-high frequency with a transition frequency of 42 GHz. This compact surface mount transistor ensures efficient performance in small electronic devices.

CA3086M96

Renesas Electronics

CA3086M96 by Renesas Electronics is a NPN BJT transistor with 6 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it ideal for amplifier applications. This complex transistor has a max collector-emitter voltage of 15V and collector current of 0.05A, suitable for surface mount configurations in small outline packages.

MMBTH10M3T5G

Onsemi

MMBTH10M3T5G by Onsemi is a NPN RF BJT with 650 MHz fT, 60 min hFE, and 0.64 W Pd. It is used in RF applications due to its small outline package and high transition frequency. The transistor operates up to 150 °C and has matte tin terminal finish for surface mount assembly.