Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,822	Request Pricing	-

BLW32

Manufacturer

Asi Semiconductor
Manufacturer's Part Number

BLW32
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
Datasheet

Datasheet

1822 In Stock

Popular Products

C1005X7R1E103K050BB

TDK

The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.

Details

M39029/58360

Esterline Technologies

CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;

Details

BAV99

MICRODIODE ELECTRONICS SHENZHEN CO LTD

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1554216004

Molex

WIRE AND CABLE;

Details

BSS138LT3G

Onsemi

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.

Details

BAV99

Comchip Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

08055C104KAT4A

KYOCERA AVX

08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.

Details

BAV99

Nexperia

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Invensys Sensor Systems

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Jinan Jingheng Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;

Details

LL4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

USB3320C-EZK-TR

Microchip Technology

Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

Details

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

Details

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.

Details

1N4148

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

Details

BLW32 Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	20
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	11 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	RADIAL
Package Style (Meter):	POST/STUD MOUNT
JESD-30 Code:	O-CRPM-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel

Category Top Products

BF240RLRM

Onsemi

BF240RLRM by Onsemi is a NPN BJT transistor with 40V VCEO, 0.025A IC, and 600MHz fT. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance of 0.34pF. Packaged in cylindrical shape with through-hole terminals for easy installation.

BFR93AR

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;

LM3046M

Texas Instruments

LM3046M by Texas Instruments is an NPN BJT with 5 elements and 14 terminals. It operates in the very high frequency band at 550 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 15V and max collector current of 0.05A, it's suitable for small outline packages in RF circuits.

BFS17PE6433

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;

LM3146M

National Semiconductor

LM3146M by National Semiconductor is an NPN BJT transistor with a max operating temperature of 85°C and a fT of 500 MHz. It has 14 terminals, can handle up to 30V, and is used in amplifier applications for the very high-frequency band.

CA3146E

Intersil

Intersil's CA3146E is a NPN BJT with 5 elements, 14 terminals, and fT of 500 MHz. It operates in the VHF band as an amplifier with max IC of 0.05 A and VCE of 30V. The transistor is housed in a plastic/epoxy package with through-hole terminals for RF applications.

2N5332

Texas Instruments

2N5332 by Texas Instruments is a PNP BJT transistor with 3 terminals, suitable for switching applications. It operates in the ultra-high frequency band up to 800 MHz, with a max collector-emitter voltage of 12V and a DC current gain of at least 20 (hFE). The package style is cylindrical, and it has a max power dissipation of 0.36W at an operating temperature of 175°C.

BSX28

STMicroelectronics

BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

KSC1674Y

Onsemi

KSC1674Y by Onsemi is an NPN BJT transistor with max VCEsat of 0.3V, hFE of 120, and fT of 600MHz. Ideal for amplifier applications in the ultra-high frequency band due to its low power dissipation and high transition frequency. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

AT-32032-TR1G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .04 A; Moisture Sensitivity Level (MSL): 1; Terminal Position: DUAL;

2N5090

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4 W; Maximum Collector Current (IC): .4 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

2N3866

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

BFP740H6327XTSA1

Infineon Technologies

BFP740H6327XTSA1 by Infineon Technologies is an NPN RF BJT with a Gp of 19.5 dB, ideal for amplifier applications in the C band. It features a hFE of 160, fT of 44 GHz, and can operate b/w -55 to 150°C. The transistor has a max Vce of 4.2V and IC of 0.045A, making it suitable for high-frequency amplification needs.

KSC1730O

Onsemi

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.

MPS5179RLRP

Onsemi

MPS5179RLRP by Onsemi is a NPN RF BJT with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.

2N5399

Texas Instruments

2N5399 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is commonly used for switching applications in the ultra-high-frequency band due to its high power dissipation of 0.36W and low collector-base capacitance of 3pF.

JANTX2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Terminals: 3; Terminal Position: DUAL;

BFP650FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

BFP620FH7764XTSA1

Infineon Technologies

BFP620FH7764XTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max fT of 65 GHz. It features a collector-emitter voltage of 2.3V and a collector current of 0.08A, making it suitable for high-frequency amplifier applications in the C band. This small outline package transistor has 4 terminals and complies with AEC-Q101 standards.

BFR92AT/R

NXP Semiconductors

NXP Semiconductors' BFR92AT/R is an NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 5000MHz, and hFE of 40. This small outline package transistor operates up to 150°C and can handle a max collector-emitter voltage of 15V.