BFR193L3E6327XTMA1 by Infineon Technologies

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BFR193L3E6327XTMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFR193L3E6327XTMA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;
Datasheet

Datasheet

261 In Stock

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BFR193L3E6327XTMA1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	8000 MHz
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	.08 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	GOLD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.58 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	BFR193L3E6327XTMA1DKR BFR 193L3 E6327CT BFR193L3E6327XTMA1CT BFR 193L3 E6327-ND BFR 193L3 E6327CT-ND BFR 193L3 E6327TR-ND BFR 193L3 E6327DKR BFR 193L3 E6327 BFR193L3E6327XTMA1TR 2156-BFR193L3E6327XTMA1-448 BFR193L3E6327XT SP000013557 BFR 193L3 E6327DKR-ND
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	70
JESD-609 Code:	e4
Maximum Collector-Emitter Voltage:	12 V
Additional Features:	LOW NOISE
Maximum Collector-Base Capacitance:	.9 pF
Reference Standard:	AEC-Q101

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