Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
434	$0.769	$333.551

BFT92E6327

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFT92E6327
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
Datasheet

Datasheet

434 In Stock

Popular Products

B340A-13-F

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DP83848IVVX/NOPB

National Semiconductor

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;

Details

LM555CMX

Texas Instruments

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

Details

DS18B20

Maxim Integrated

DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.

Details

LL4148

Weitron Technology

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WS

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358AN

STMicroelectronics

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

BAV99+

Multicomp Pro

BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.

Details

BSS138

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

Details

ATMEGA328P-AU

Microchip Technology

ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.

Details

1N4148

ROHM

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

SS14

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

Details

BAV99

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Kingwell Technonlogy

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;

Details

1N4148

Itt Components

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

Details

BFT92E6327 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	5000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	15
Minimum Operating Temperature:	-65 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	.8 pF
Peak Reflow Temperature (C):	260

Category Top Products

MPS5179ZL1

Onsemi

MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

55GN01MA-TL-E

Onsemi

The Onsemi 55GN01MA-TL-E is an NPN RF BJT with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.4W, min DC current gain of 100, and nominal transition frequency of 3000MHz. Ideal for high-frequency amplification in electronic circuits.

NE85634-T1-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

934067708235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;

BFS20,215

NXP Semiconductors

The NXP Semiconductors BFS20,215 is a single NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 40. It operates in the very high frequency band up to 450MHz and is suitable for applications requiring high-frequency amplification or switching.

CA3083M

Intersil

CA3083M by Intersil is a NPN BJT with 5 elements, ideal for high-frequency switching applications. With a max fT of 450 MHz and IC of 0.1 A, it operates in the VHF band and comes in a small outline package for surface mounting.

SD1420

STMicroelectronics

SD1420 by STMicroelectronics is an NPN BJT transistor with a max power dissipation of 8.75W, suitable for amplifier applications in the ultra-high frequency band. It has a min DC current gain of 20 (hFE), operates at temperatures up to 200 °C, and features a max collector-emitter voltage of 28V.

BF959RL1G

Onsemi

BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.

BFR93AW

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

CPH6021

Onsemi

CPH6021 by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the ultra-high frequency band with a max fT of 10,000 MHz. With a max IC of 0.1 A and hFE of 60, it has a package style of small outline and can handle up to 0.7 W power dissipation at 150 °C.

SMMBTH10LT1

Onsemi

SMMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and a transition frequency of 650MHz. It is designed for amplifier applications, featuring a small outline package with gull wing terminals for surface mount assembly in ultra-high-frequency circuits.

2N2905A

Thomson-csf Semiconductors

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JESD-30 Code: O-MBCY-W3; Package Shape: ROUND;

BFR96

NXP Semiconductors

NXP Semiconductors' BFR96 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max VCE of 15V and IC of 0.075A, ideal for ultra-high frequency amplifier applications. The package is round, surface mountable, with 3 terminals in a disk button style.

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

MSC81002

STMicroelectronics

STMicroelectronics' MSC81002 is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in L Band frequencies. With a max power dissipation of 6.3W and max collector current of 0.2A, it operates at up to 200 °C, featuring a ceramic-metal package body and silicon element material.

PN5179/D26Z

National Semiconductor

PN5179/D26Z by National Semiconductor is an NPN BJT transistor with VCEsat of 0.4V, Gp of 15dB, and fT of 900MHz. Ideal for amplifier applications in the very high-frequency band due to its silicon element material and 12V max collector-emitter voltage. The package is cylindrical with a plastic/epoxy body, through-hole terminals, and a single configuration.

934063142215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;

SS9018G

Onsemi

SS9018G by Onsemi is a NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 72, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.

NE85633-T1B-A

Renesas Electronics

NE85633-T1B-A by Renesas Electronics is a NPN BJT transistor for RF applications. It operates in the ultra high frequency band with a transition frequency of 7000 MHz. This single configuration transistor has a max collector-emitter voltage of 12V and is suitable for amplifier circuits in small outline packages.