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BFT92E6327

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFT92E6327
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
Datasheet

Datasheet

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BFT92E6327 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	5000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	15
Minimum Operating Temperature:	-65 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	.8 pF
Peak Reflow Temperature (C):	260

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