Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
335	Request Pricing	-

MPSH81RL1

Manufacturer

Onsemi
Manufacturer's Part Number

MPSH81RL1
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Terminal Position: BOTTOM; Package Shape: ROUND;
Datasheet

Datasheet

335 In Stock

Popular Products

BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM2675M-ADJ/NOPB

National Semiconductor

SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LL4148

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM2931AZ-5.0RPG

Onsemi

LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.

Details

SMBJ18CA

Thinking Electronic Industrial

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Leshan Radio

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Changzhou Galaxy Century Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Won-top Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Central Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

Details

SMBJ18CA

Eic Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Alpha & Omega Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

Details

SMBJ18CA

Bourns

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Vishay Intertechnology

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.

Details

MPSH81RL1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	600 MHz
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	PNP
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.85 pF

Category Top Products

NE662M04-T2-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; JESD-30 Code: R-PDSO-F4;

2N2222

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MMBTH81

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

2N4427

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): .5 A;

934059125115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;

BFY90

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Transistor Element Material: SILICON;

BFQ256A-T

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; Additional Features: HIGH RELIABILITY;

KSP10

Onsemi

The Onsemi KSP10 is an NPN BJT transistor with a max VCEsat of 0.5V and fT of 650MHz. It is used in RF applications due to its ultra-high frequency band, with a max collector-emitter voltage of 25V and power dissipation of 1W.

2N2368

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

BFR520

NXP Semiconductors

The NXP Semiconductors BFR520 is a RF Small Signal BJT transistor with NPN polarity, ideal for amplifier applications. It has a max power dissipation of 0.3W, operates in L Band frequency up to 9000MHz, and can handle a max collector current of 0.07A.

BFR93A,215

NXP Semiconductors

NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.

BFQ256AT/R

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

BFS17NQTA

Diodes Incorporated

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

1075MP

Ghz Technology

NPN; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1; Transistor Element Material: SILICON;

BFT92W

NXP Semiconductors

The NXP Semiconductors BFT92W is a PNP RF BJT transistor with a max power dissipation of 0.3 W and a transition frequency of 4000 MHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly.

2SC5245A-4-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

934055908115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

BLW32

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;

BFS20,215

NXP Semiconductors

The NXP Semiconductors BFS20,215 is a single NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 40. It operates in the very high frequency band up to 450MHz and is suitable for applications requiring high-frequency amplification or switching.

BFS17

Vishay Telefunken

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;