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2N5583

Manufacturer

Tt Electronics Plc
Manufacturer's Part Number

2N5583
Description

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Qualification: Not Qualified; No. of Terminals: 3;
Datasheet

Datasheet

248 In Stock

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2N5583 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-205AD
Surface Mount:	NO
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE

Category Top Products

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2SC5277A-2-TL-E

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KSC1674O-C by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 600MHz, and can handle a max IC of 0.02A.

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Infineon's BF771E6327HTSA1 is a NPN BJT transistor with 12V VCEO, 8000MHz fT, and 0.08A IC. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it features low collector-base capacitance of 1pF.

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MPS5179RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and low capacitance at 1pF, housed in a cylindrical package suitable for very high-frequency bands.