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BFR96

Manufacturer

Asi Semiconductor
Manufacturer's Part Number

BFR96
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16 W; Maximum Collector Current (IC): .075 A; Terminal Form: FLAT;
Datasheet

Datasheet

1208 In Stock

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MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.

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LM317D2TG

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LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.

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CSNF651

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CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.

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STM8S003F3P6TR

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2N2222A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

PIC18F4550T-I/PT

Microchip Technology

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

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SMBJ18CA

Changzhou Galaxy Century Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

AMS1117-3.3

Advanced Monolithic Systems

AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.

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SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

NUP2105LT1G

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NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

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LD1117S33CTR

STMicroelectronics

STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

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EU2B-YS2J03F

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ROTARY SWITCH;

Details

2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM7805CT

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Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;

Details

2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;

Details

2N7002

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

Details

BFR96 Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	.075 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	25
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	16 W
Maximum Collector-Emitter Voltage:	15 V
Terminal Position:	RADIAL
Package Style (Meter):	POST/STUD MOUNT
JESD-30 Code:	O-CRPM-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Maximum Collector-Base Capacitance:	1.5 pF

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Broadcom's AT-32032-TR1G is an NPN BJT transistor with a max power dissipation of 0.2W and a min DC current gain of 70. It is designed for S Band applications, featuring a small outline package shape and Gull Wing terminal form for surface mount assembly.

MMBTH11

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

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MMBT5179 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.4V and min Gp of 15dB, ideal for amplifier applications in the ultra-high frequency band. This single configuration transistor has a small outline package style, operates up to 150°C, and features a transition frequency of 900MHz.

934063133215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

934066878225

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 53000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .03 A;

HFA3134IHZ96

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NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .026 A; Minimum DC Current Gain (hFE): 48;

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BFR360FH6765XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14 GHz. It has a collector-emitter voltage of 6V and collector current of 0.035A, making it suitable for amplifier applications in the S band. This surface-mount transistor comes in a small outline package with 3 terminals.

MSC2295-BT1

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The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.

2N5109

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Terminal Form: WIRE;

HFA3102BZ96

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NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

KSC1393O

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KSC1393O by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, operates in the very high frequency band up to 700 MHz, and has a max collector-emitter voltage of 30 V. This transistor comes in a cylindrical package with through-hole terminals and can handle a max power dissipation of 0.25 W at an ambient temperature of 150 °C.

50A02CH-TL-E

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BFQ252

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;

MPS3563RL1

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MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

TIS64A

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TIS64A by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 150°C, and a transition frequency of 500MHz. The package style is cylindrical with a plastic/epoxy body material and wire terminals.

Bulk

BFR96

1208 In Stock

Popular Products

MBR0540T1G

LM317D2TG

CSNF651

STM8S003F3P6TR

2N2222A

PIC18F4550T-I/PT

SMBJ18CA

SMBJ18CA

AMS1117-3.3

SS14

1N4148

1N4148

NUP2105LT1G

LD1117S33CTR

2N2222A

EU2B-YS2J03F

2N2222A

LM7805CT

2N2222A

2N7002

BFR96 Technical Details

Category Top Products

BFY740B01PB4SA1

AT-32032-TR1G

MMBTH11

BFR92AW

MMBT5179

934063133215

934066878225

HFA3134IHZ96

BFR360FH6765XTSA1

MSC2295-BT1

2N5109

HFA3102BZ96

KSC1393O

50A02CH-TL-E

BFQ252

MPS3563RL1

TIS64A

BFR96

BFS17

BFR92A