Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,208	Request Pricing	-

BFR96

Manufacturer

Asi Semiconductor
Manufacturer's Part Number

BFR96
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16 W; Maximum Collector Current (IC): .075 A; Terminal Form: FLAT;
Datasheet

Datasheet

1208 In Stock

Popular Products

BAV99

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

RC0603FR-071KL

Yageo

Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.

Details

M24308/2-1F

Souriau-sunbank Connection Technologies

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body Length: 1.228 inch; Mounting Type: CABLE AND PANEL; Termination Type: CRIMP;

Details

SN65HVD234DR

Texas Instruments

SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.

Details

1N4148W-7-F

Diodes Incorporated

1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.

Details

1N4148

Comchip Technology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM317AEMP/NOPB

Texas Instruments

LM317AEMP/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and a max output current of 1.5A. It operates in temperatures ranging from -40°C to 125°C, making it suitable for various applications requiring precise voltage regulation in a compact package.

Details

1N4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

World Products

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBRS3200T3G

Onsemi

MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.

Details

1N4148

Compensated Devices

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

Details

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;

Details

LM555CN

Rochester Electronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;

Details

2N7002-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

Details

LM317T/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;

Details

BAT54C-7-F

Diodes Incorporated

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

Details

LL4148

Taitron Components

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

CC0603KRX7R9BB103

Yageo

Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

2N2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

Details

BFR96 Technical Details

TYPE	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC):	.075 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	25
No. of Terminals:	4
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	16 W
Maximum Collector-Emitter Voltage:	15 V
Terminal Position:	RADIAL
Package Style (Meter):	POST/STUD MOUNT
JESD-30 Code:	O-CRPM-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Maximum Collector-Base Capacitance:	1.5 pF

Category Top Products

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.

BFR360FH6765XTSA1

Infineon Technologies

BFR360FH6765XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14 GHz. It has a collector-emitter voltage of 6V and collector current of 0.035A, making it suitable for amplifier applications in the S band. This surface-mount transistor comes in a small outline package with 3 terminals.

2N4996

Texas Instruments

2N4996 by Texas Instruments is an NPN RF BJT with a max. collector-emitter voltage of 18V, ideal for amplifier applications in the VHF band. It has a min. DC current gain of 50 and operates at up to 150°C, with a transition frequency of 600MHz for high-frequency performance.

MMBTH10LT1

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;

2N5583

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): CYLINDRICAL;

BFW17A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .15 A;

934055908115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

LM3046MX/NOPB

Texas Instruments

LM3046MX/NOPB by Texas Instruments is a NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high frequency band up to 550 MHz, making it suitable for amplifier applications. With a max power dissipation of 0.75W and operating temperature of 85°C, it offers reliable performance in small outline packages.

MMBTH10-4LT1

Onsemi

MMBTH10-4LT1 by Onsemi is an NPN RF BJT with a max fT of 800 MHz. It has a max IC of 0.025 A and hFE of 120, suitable for UHF applications. This small outline transistor operates up to 150 °C, making it ideal for high-frequency circuits in compact designs.

BFS17A,215

NXP Semiconductors

NXP Semiconductors' BFS17A,215 is an NPN RF BJT transistor with a max fT of 2800 MHz. It has a small outline package style and can handle up to 15V collector-emitter voltage. Ideal for ultra-high frequency amplifier applications in surface mount configurations.

BFQ252

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;

JANTX2N3866A

Raytheon Semiconductor

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Package Body Material: METAL;

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

IMX5T108

ROHM

ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.

HFA3127RZ

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

2N4261

Texas Instruments

2N4261 by Texas Instruments is a PNP BJT transistor for AMPLIFIER applications. It has a hFE of 30, VCE of 15V, and fT of 2MHz. With a max power dissipation of 0.2W, it operates in the ULTRA HIGH FREQUENCY BAND.

934067708215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;

BFU550XRVL

NXP Semiconductors

The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.

934067697215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;

BFT92E6327

Siemens

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;