Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,469	Request Pricing	-

2N4261

Manufacturer

Texas Instruments
Manufacturer's Part Number

2N4261
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;
Datasheet

Datasheet

1469 In Stock

Popular Products

M39029/56-351

Amphenol

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;

Details

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

Details

M24308/2-1F

Bel Fuse

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

Details

BAV99

Secos

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Harris Semiconductor

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

Details

2N7002

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

Details

BAV99

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

U.FL-R-SMT-1(10)

Hirose Electric

U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.

Details

LM317T

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

Details

1N4148

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

FDV304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;

Details

1N4148WS

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Yangzhou Yangjie Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;

Details

LM107H/883

Linear Technology

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

Details

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

Details

1N4148WT

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

IRLML6401TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

Details

SMBJ18CA

Good-ark Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

Details

1N4148WS

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N4261 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	2 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.03 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
JEDEC-95 Code:	TO-72
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	30
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	2.5 pF
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

934060176115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; JESD-30 Code: R-PDSO-G4;

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

BFT92W

NXP Semiconductors

The NXP Semiconductors BFT92W is a PNP RF BJT transistor with a max power dissipation of 0.3 W and a transition frequency of 4000 MHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly.

BFR520TT/R

NXP Semiconductors

NXP Semiconductors' BFR520TT/R is a NPN RF BJT transistor with 9000 MHz fT. It's a single configuration amplifier for L Band applications, featuring 0.07 A IC and Gull Wing terminals. This small outline package has a plastic body, tin finish, and can withstand peak reflow at 260°C for up to 40s.

NSVF5490SKT3G

Onsemi

NSVF5490SKT3G by Onsemi is a NPN BJT transistor with 90 min hFE, 8000 MHz fT, and L Band frequency range. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs in automotive electronics (AEC-Q101).

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

BFR96

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

BLW32

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;

BFR93AW-E6327

Infineon Technologies

BFR93AW-E6327 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in L Band with a transition frequency of 6000 MHz, ideal for amplifier applications. This small outline package has a max power dissipation of 0.3 W and can handle up to 12 V collector-emitter voltage.

BFU520XRR

NXP Semiconductors

The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.

934067693135

NXP Semiconductors

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

2N2907A

Space Power Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

FFB3946

Onsemi

The Onsemi FFB3946 is a RF BJT transistor with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max voltage of 40V and max current of 0.2A. Operating up to 150 °C, it offers a transition frequency of 200MHz for efficient performance.

JANS2N3866AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Package Shape: RECTANGULAR;

JANTXV2N2907A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-206AA; Package Shape: ROUND;

2N3866

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Maximum VCEsat: 1 V;

MPSH10G

Onsemi

MPSH10G by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max power dissipation of 0.35W and operates in the ultra-high frequency band.

934067703235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

2N2222

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.