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934067703235

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934067703235
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
Datasheet

Datasheet

460 In Stock

Popular Products

2N7002

Calogic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

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1N4148WS

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

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LM358AN

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

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SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

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BSS138

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;

Details

SS14

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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SMBJ18CA

Sangdest Microelectronics (Nanjing)

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N7002

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;

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NC7WZ17P6X

Onsemi

The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.

Details

BAV99

Panasonic

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Vishay Intertechnology

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.

Details

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

Details

LM107H/883

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

Details

BAV99

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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FDC5614P

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FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

Details

LM555CM

Texas Instruments

LM555CM by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V and max operating temperature of 70°C. It comes in a small outline package, suitable for applications requiring pulse generation or rectangular waveform outputs. With surface mount capability and low supply current of 15mA, it is ideal for commercial-grade electronic circuits.

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1N4148

Grande Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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SS14

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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STM32H753ZIT6

STMicroelectronics

STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.

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934067703235 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	11000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.065 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.45 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	16 V
Maximum Collector-Base Capacitance:	.65 pF
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

Category Top Products

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;

MPS5179G

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MPS5179G by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it ideal for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals, suitable for high-frequency circuit designs.

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NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .25 A; Terminal Form: GULL WING;

MPS918RLRP

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MPS918RLRP by Onsemi is an NPN RF BJT with 3 terminals and a max fT of 600 MHz. Ideal for amplifier applications, it has a max VCE of 15V and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.

BF240RL

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BF240RL by Onsemi is a NPN BJT transistor with 40V VCEO, 0.025A IC, and 600MHz fT. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance of 0.34pF. The through-hole package style makes it suitable for various RF small signal designs.

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

TIS63A

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TIS63A by Texas Instruments is an NPN BJT transistor with a max fT of 500 MHz. It has a max IC of 0.03 A and hFE of 30, ideal for amplifier applications. The package is cylindrical with 3 terminals, suitable for very high frequency band circuits.

BFP540ESDH6327XTSA1

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SS9018GBU

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SS9018GBU by Onsemi is an NPN RF BJT transistor with a max fT of 1100 MHz. It has a max IC of 0.05 A and hFE of 72, making it ideal for amplifier applications. With a package style of cylindrical and terminal finish in tin, it operates at up to 150°C in the very high-frequency band.

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NXP Semiconductors

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START450

STMicroelectronics

START450 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies in the C band with a nominal transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

2N3643

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

BFU550WX

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The NXP Semiconductors BFU550WX is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max collector-emitter voltage of 12V, fT of 11GHz, and can handle a max collector current of 0.05A.

NSVF4020SG4T1G

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NSVF4020SG4T1G by Onsemi is an NPN BJT transistor for amplifier applications in KU band. With a max power dissipation of 0.4W, it offers a min hFE of 60 and fT of 16GHz. This small outline package has 4 terminals, operates b/w -55 to 150°C, and supports up to 8V collector-emitter voltage.

BFS17NTA

Diodes Incorporated

Diodes Incorporated's BFS17NTA is an NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.33W and max operating temp of 150°C, it offers a transition frequency of 3200MHz. Its small outline package makes it suitable for surface mount designs in RF circuits.

934047450115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 17000 MHz; Maximum Collector Current (IC): .0036 A; Qualification: Not Qualified;

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Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .025 A; Qualification: Not Qualified;

BLW32

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;

BFR520,215

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NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.