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2N5109
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ManufacturerCentral Semiconductor
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Manufacturer's Part Number2N5109
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
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Datasheet
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Details2N5109 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 1200 MHz |
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | .4 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 2.5 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Other Names: | 2N5109-ND 150-2N5109 |
| JEDEC-95 Code: | TO-39 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 40 |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | -65 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 20 V |
| Maximum Collector-Base Capacitance: | 3.5 pF |
