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BFS17

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFS17
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
Datasheet

Datasheet

2023 In Stock

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CRG0805F10K

TE Connectivity

TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.

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2N2222A

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M24308/2-1F

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D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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SN65HVD230DR

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SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.

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1N4148

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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FDLL4148

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FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.

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NE555/D

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Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

Details

2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

Details

MBRS130LT3G

Rochester Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBRS340T3G

Onsemi

MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.

Details

ERJ6ENF10R0V

Panasonic

Panasonic ERJ6ENF10R0V is a 10 ohm fixed resistor with 1% tolerance, suitable for surface mount applications. With a rated power dissipation of 0.125W and operating voltage of 150V, it operates b/w -55°C to 155°C. Its metal glaze/thick film technology ensures stable performance in various electronic circuits.

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2N7002-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

Details

SS14

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RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;

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SMBJ18CA

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SMBJ18CA

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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SN6505BDBVR

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SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

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M24308/2-1F

Itt Cannon

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Filter Feature: NO;

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BFS17 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	1600 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.3 W
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	25
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	1.5 pF
Reference Standard:	CECC
Peak Reflow Temperature (C):	260

Category Top Products

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RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

MPSH17RLRAG

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MPSH17RLRAG by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.625W and fT of 800MHz. Ideal for amplifier applications, it operates in the very high-frequency band with a max collector-emitter voltage of 15V.

BFR380FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

MSC81002

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STMicroelectronics' MSC81002 is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in L Band frequencies. With a max power dissipation of 6.3W and max collector current of 0.2A, it operates at up to 200 °C, featuring a ceramic-metal package body and silicon element material.

2SC2814-3

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Onsemi's 2SC2814-3 is an NPN RF BJT with a max fT of 320 MHz. It has a VCE of 20V and IC of 0.03A, ideal for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

MSC1000M

STMicroelectronics

STMicroelectronics' MSC1000M is a NPN BJT transistor with hFE of 15, IC of 0.3A, and VCE of 20V. Ideal for L Band applications, it's a single configuration amplifier in a plastic/epoxy package with flange mount style. Operating up to 200 °C, it has radial terminals and emitter case connection.

2N3866A

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BFP405FH6327XTSA1

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BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.

BFR92

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

START499

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START499 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and a nominal transition frequency of 42 GHz. Its compact rectangular package supports surface mounting with gull-wing terminals. Ideal for ultra-high frequency circuits, it operates at a max collector-emitter voltage of 4.5 V.

NSF2250WT1G

Onsemi

The Onsemi NSF2250WT1G is an NPN RF BJT transistor with a max operating temperature of 150 °C. It has a min DC current gain of 120 and a nominal transition frequency of 2300 MHz, making it suitable for ultra-high-frequency amplifier applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

2N3010

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2N3010 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 25, and fT of 600MHz. Ideal for switching applications due to its max. collector-emitter voltage of 11V and max. collector current of 0.5A in a cylindrical package with wire terminals.

TIS128

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TIS128 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.25W, hFE of 30, and fT of 6.5MHz. With a max operating temp of 175°C and VCE of 45V, it's suitable for high-frequency circuit designs.

MMBT5179

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

CA3083M96

Renesas Electronics

CA3083M96 by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450MHz, with a max collector-emitter voltage of 15V and current of 0.1A. This small outline package has 16 terminals, Gull Wing form, and is surface mountable.

Bulk

BFS17

2023 In Stock

Popular Products

SMBJ18CA

CRG0805F10K

2N2222A

M24308/2-1F

1N4148

SN65HVD230DR

1N4148

FDLL4148

NE555/D

2N2222A

MBRS130LT3G

MBRS340T3G

ERJ6ENF10R0V

2N7002-T1-E3

SS14

SMBJ18CA

SMBJ18CA

SN6505BDBVR

2N2222A

M24308/2-1F

BFS17 Technical Details

Category Top Products

2SC5536A-TL-H

MPSH17RLRAG

BFR380FH6327XTSA1

MSC81002

2SC2814-3

MSC1000M

2N3866A

BFP405FH6327XTSA1

BFR92

START499

NSF2250WT1G

2N3010

TIS128

MMBT5179

CA3083M96

BFR93A

BF224

2N3866

SD1416

934059126115