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BFU725F/N1,115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFU725F/N1,115
Description

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .136 W; Maximum Collector Current (IC): .04 A; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
Datasheet

Datasheet

913 In Stock

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BFU725F/N1,115 Technical Details

TYPE	DESCRIPTION
Other Names:	954-BFU725F/N1115 BFU725FN1115 568-5111-6 934063513115 NXPNXPBFU725F/N1,115 BFU725F/N1,115-ND 2156-BFU725F/N1,115 568-5111-1 568-5111-2
Maximum Collector Current (IC):	.04 A
Maximum Time At Peak Reflow Temperature (s):	30
Transistor Element Material:	SILICON GERMANIUM
Sub-Category:	BIP RF Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	160
Terminal Finish:	TIN
JESD-609 Code:	e3
Maximum Power Dissipation (Abs):	.136 W
No. of Elements:	1
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

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