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BFU725F/N1,115
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ManufacturerNXP Semiconductors
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Manufacturer's Part NumberBFU725F/N1,115
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DescriptionNPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .136 W; Maximum Collector Current (IC): .04 A; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
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Datasheet
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DetailsBFU725F/N1,115 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | .04 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Transistor Element Material: | SILICON GERMANIUM |
| Sub-Category: | BIP RF Small Signal |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 160 |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .136 W |
| No. of Elements: | 1 |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |
