Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4,789	Request Pricing	-

934063114215

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934063114215
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .12 A; Terminal Position: DUAL;
Datasheet

Datasheet

4789 In Stock

Popular Products

SMBJ18CA

Zowie Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Secos

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBR1560CT

General Instrument

MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.

Details

BAV99

Kingwell Technonlogy

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20Z+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;

Details

SS14

Goodwork Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CRCW040210K0FKED

Vishay Intertechnology

Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.

Details

2N7002

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

Details

1N4148WS

Synsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Vishay Intertechnology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS495A-SP

Honeywell Sensing And Control

SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.

Details

SMBJ18CA

Vishay Intertechnology

Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.

Details

ECS-.327-12.5-17X-TR

Ecs International

ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.

Details

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

Details

BSS138-7-F

Diodes Incorporated

Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.

Details

2N2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;

Details

M39029/58-360

Fct Electronic

CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;

Details

1N4148

Synsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

934063114215 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	9000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.12 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	HIGH RELIABILITY
Highest Frequency Band:	L BAND
Case Connection:	COLLECTOR

Category Top Products

MMBTH81_NL

Fairchild Semiconductor

MMBTH81_NL by Fairchild Semiconductor is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, DC current gain of 60 (hFE), and operates at temperatures up to 150°C. This surface-mount transistor features a small outline package with gull wing terminals.

BFR92A

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Emitter Voltage: 15 V;

BFR380FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

NSVF5488SKT3G

Onsemi

NSVF5488SKT3G by Onsemi is an NPN BJT transistor with a max fT of 7000 MHz. It has a max IC of 0.07 A and hFE of 90, ideal for amplifier applications in the UHF band. The package is a small outline with flat terminals, suitable for surface mount assembly.

MMPQ2369G

Onsemi

MMPQ2369G by Onsemi is a NPN BJT with 4 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 15V, fT of 550MHz, and IC of 0.5A. The transistor is surface mountable with a small outline package and Gull Wing terminals.

934061234115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1;

MRF911

Motorola

MRF911 by Motorola is a NPN RF BJT transistor for switching applications. With a max. collector-emitter voltage of 12V, it operates in L band with fT of 5000 MHz. This surface-mount device has 4 terminals and a min hFE of 30, making it suitable for high-frequency signal amplification.

BFG425WT/R

NXP Semiconductors

NXP Semiconductors' BFG425WT/R is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135W, fT of 25GHz, and hFE of 50. Suitable for switching purposes with a max collector current of 0.03A and max collector-emitter voltage of 4.5V.

MMBTH10

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

BFS17

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .025 A; Qualification: Not Qualified;

BFY90

Siemens

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;

2N2219A

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Style (Meter): CYLINDRICAL; JESD-30 Code: O-MBCY-W3;

934061289115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;

SD1278

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;

MMBTH10

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

NSVF4017SG4T1G

Onsemi

NSVF4017SG4T1G by Onsemi is a NPN BJT transistor with 4 terminals, operating in X Band frequency range up to 10GHz. It has a max power dissipation of 0.45W and can handle collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 compliance.

15GN03FA-TL-H

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

2N2369A

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;

BFQ256AT/R

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

BFP540ESDH6327XTSA1

Infineon Technologies

BFP540ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for S Band applications. With a max collector-emitter voltage of 4.5V and a nominal transition frequency of 30,000 MHz, it offers high performance in a small outline package.