Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,449	$0.024	$58.164

MPSH24

Manufacturer

Onsemi
Manufacturer's Part Number

MPSH24
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

2449 In Stock

Popular Products

BAV99

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Won-top Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

Details

BAV99

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MC33269T-3.3G

Onsemi

MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.

Details

2N2222A

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

Details

M24308/2-1F

Cinch Connectivity Solutions

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;

Details

LM317T

Comset Semiconductors

Other Regulators; No. of Terminals: 3; Terminal Pitch: 2.54 mm; Minimum Output Voltage-1: 1.2 V; Technology: BIPOLAR; Operating Temperature (TJ-Max): 125 Cel;

Details

M24308/2-1F

Cristek Interconnects

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;

Details

BSS138

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

NE555/D

General Electric Solid State

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

Details

SS14

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58-360

Itt Cannon

CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;

Details

1N4148

Won-top Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM7805CT

Silicon Group

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;

Details

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

LM358N

Silicon Group

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148WT

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MPSH24 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	400 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	30
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.625 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Additional Features:	LOW NOISE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.36 pF

Category Top Products

S822T

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; JESD-609 Code: e3;

NE85633-T1B-A

California Eastern Laboratories

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

HFA3127BZ96

Renesas Electronics

Renesas Electronics' HFA3127BZ96 is an NPN RF BJT with 5 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 8V and a nominal transition frequency of 8000MHz. This surface-mount transistor has a small outline package with 16 terminals in gull-wing form.

MMPQ2369R2

Onsemi

The Onsemi MMPQ2369R2 is an NPN RF BJT with 4 elements, ideal for amplifier applications. It features a max operating temp of 150 °C, fT of 550 MHz, and hFE of 40. This transistor has a max VCE of 15V and IC of 0.5A, making it suitable for high-frequency circuits in small outline packages.

MPS5179

Onsemi

MPS5179 by Onsemi is a NPN RF BJT transistor with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and operates up to 150 °C. The package is cylindrical with through-hole terminals and collector-emitter voltage of 12V.

2SC5277A-2-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

HFA3096BZ96

Intersil

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Collector-Emitter Voltage: 8 V;

934061142115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; Case Connection: EMITTER;

SD1219-5

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;

2N2907

General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

3N35

Texas Instruments

3N35 by Texas Instruments is a NPN BJT transistor with 4 terminals, operating at 150°C. It has a max collector-emitter voltage of 30V and a transition frequency of 150MHz. Ideal for amplifier applications in the very high-frequency band due to its 0.125W power dissipation capability.

CA3083M

Rochester Electronics

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

KSC1393

Onsemi

KSC1393 by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, nominal transition frequency of 700 MHz, and max collector-emitter voltage of 30 V. This transistor operates in the very high-frequency band and has a max power dissipation of 0.25 W at an ambient temperature of 150 °C.

2N3866A

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Package Style (Meter): CYLINDRICAL;

C-33

ROHM

ROHM C-33 is an NPN BJT transistor for amplifier applications. Features include VCEsat of 0.4V, Gp of 15dB, and hFE of 20. Operating at up to 150°C, it has a fT of 1000MHz and can handle IC up to 0.05A in the UHF band.

HFA3127B

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Terminal Form: GULL WING;

934067708235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;

MPSH17RLRP

Onsemi

MPSH17RLRP by Onsemi is a NPN RF BJT transistor with 3 terminals. It operates in the very high frequency band up to 800 MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and low capacitance of 0.9 pF, it is ideal for high-frequency circuit designs.

BFU910FX

NXP Semiconductors

NXP Semiconductors' BFU910FX is a NPN RF BJT transistor with 4 terminals, suitable for K Band applications. With a max fT of 90 GHz and IC of 0.015 A, it's ideal for amplifier circuits requiring high-frequency performance in small outline packages. The device features silicon germanium element material and can withstand peak reflow temp of 260°C per IEC-60134 standard.

BFU550XRVL

NXP Semiconductors

The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.