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NSVMMBTH10LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberNSVMMBTH10LT1G
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Time At Peak Reflow Temperature (s): 30;
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Datasheet
717 In Stock
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DetailsNSVMMBTH10LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 650 MHz |
| Other Names: | ONSONSNSVMMBTH10LT1G 2156-NSVMMBTH10LT1G-OS 2832-NSVMMBTH10LT1GTR NSVMMBTH10LT1G-ND NSVMMBTH10LT1GOSCT NSVMMBTH10LT1GOSDKR NSVMMBTH10LT1GOSTR |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 60 |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .3 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |