Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
590	Request Pricing	-

BFS17PE6433

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFS17PE6433
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .025 A;
Datasheet

Datasheet

590 In Stock

Popular Products

1N4148WT

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14+

Multicomp Pro

SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.

Details

1N4148

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

FDV303N

Onsemi

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.

Details

SMBJ18CA

Continental Device India

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20U+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: SQUARE; Housing: PLASTIC; Minimum Supply Voltage: 3 V;

Details

LM2931Z-5.0RPG

Onsemi

LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.

Details

KSZ9031RNXIA

Micrel

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;

Details

MBR0520L-T1

Won-top Electronics

MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.

Details

USBLC6-2SC6

STMicroelectronics

USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.

Details

LL4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Grande Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

STM32H750VBT6

STMicroelectronics

STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.

Details

1N4148

Surge Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Promax-johnton

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDC5614P

MSKSEMI SEMICONDUCTOR

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

Details

ULN2803A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

Details

USB3320C-EZK-TR

Microchip Technology

Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

Details

BFS17PE6433 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	2500 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.28 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	20
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	.8 pF
Peak Reflow Temperature (C):	260

Category Top Products

NSVF5490SKT3G

Onsemi

NSVF5490SKT3G by Onsemi is a NPN BJT transistor with 90 min hFE, 8000 MHz fT, and L Band frequency range. Ideal for amplifier applications due to its small outline package style and high transition frequency. Suitable for surface mount designs in automotive electronics (AEC-Q101).

MMBTH10

Electronic Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;

934067694135

NXP Semiconductors

RF Small Signal Bipolar Transistors;

JANTX2N3866A

Raytheon Semiconductor

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Package Body Material: METAL;

NTE2402

Nte Electronics

NTE2402 by Nte Electronics is an RF BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the ultra-high frequency band up to 5000 MHz, with a max collector-emitter voltage of 15V and a power dissipation of 0.2W. The package is small outline, surface mountable, with Gull Wing terminals.

BFR93AW-E6327

Infineon Technologies

BFR93AW-E6327 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in L Band with a transition frequency of 6000 MHz, ideal for amplifier applications. This small outline package has a max power dissipation of 0.3 W and can handle up to 12 V collector-emitter voltage.

934067694115

NXP Semiconductors

RF Small Signal Bipolar Transistors;

2N5583

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): CYLINDRICAL;

FFB3946

Onsemi

The Onsemi FFB3946 is a RF BJT transistor with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max voltage of 40V and max current of 0.2A. Operating up to 150 °C, it offers a transition frequency of 200MHz for efficient performance.

BFG540/X,215

NXP Semiconductors

NXP Semiconductors' BFG540/X,215 is a NPN RF BJT with 4 terminals in a small outline package. It operates in L Band with fT of 9000 MHz and can handle 0.12 A collector current. Ideal for amplifier applications, it has a max power dissipation of 0.5 W at 150°C ambient temperature.

3001

Microsemi

Microsemi 3001 is an NPN BJT transistor for amplifier applications. Features include S band frequency, max operating temp of 200°C, and 0.2A collector current. Its ceramic-metal package with flange mount shape makes it suitable for RF signal amplification in various electronic devices.

MCH4015

Onsemi

The Onsemi MCH4015 is an NPN RF BJT transistor with a max power dissipation of 0.45W and fT of 10GHz. It is used in X Band applications due to its small outline package, flat terminals, and dual terminal position.

2N3866

Intersil

NPN; Nominal Transition Frequency (fT): 1000 MHz; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Transistor Element Material: SILICON;

BF224ZL1

Onsemi

BF224ZL1 by Onsemi is a NPN BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for RF applications in the very high frequency band due to its SILICON transistor element and cylindrical package style. Operates at up to 150 °C with through-hole terminals for easy installation.

BF824,215

NXP Semiconductors

The NXP Semiconductors BF824,215 is a PNP RF BJT with 3 terminals and max power dissipation of 0.3W. It operates at up to 150°C, has a max collector-emitter voltage of 30V, and fT of 450MHz. Ideal for high-frequency applications in small outline packages requiring low power consumption.

CPH6074

Onsemi

CPH6074 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band up to 1200 MHz, with a max collector-emitter voltage of 15V and power dissipation of 0.5W. The package is a small outline with Gull Wing terminals, making it ideal for surface mount applications.

LM3146N

National Semiconductor

LM3146N by National Semiconductor is an NPN BJT with 5 elements and 14 terminals. It operates in the very high-frequency band up to 500 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 30V and max collector current of 0.05A, it offers complex configuration in a rectangular package suitable for through-hole mounting.

HFA3046BZ

Integrated Device Technology

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Qualification: Not Qualified;

LM3046M

Texas Instruments

LM3046M by Texas Instruments is an NPN BJT with 5 elements and 14 terminals. It operates in the very high frequency band at 550 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 15V and max collector current of 0.05A, it's suitable for small outline packages in RF circuits.

2SA1857

Onsemi

The Onsemi 2SA1857 is a PNP RF BJT transistor with VCEsat of 0.3V, hFE of 60, and fT of 750MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector-emitter voltage of 12V.