Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
8,619	Request Pricing	-

BFR93A

Manufacturer

Siemens
Manufacturer's Part Number

BFR93A
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

8619 In Stock

Popular Products

LL4148

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Kec

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

Details

1N4148

Leshan Radio

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ABS25-32.768KHZ-1-T

Abracon

Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.

Details

BAV99

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FT232RQ-REEL

FTDI

FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.

Details

1N4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

CC0603KRX7R9BB103

Yageo

Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

Details

SS14

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;

Details

EU2B-YS3203C

Idec

ROTARY SWITCH;

Details

LM317T

STMicroelectronics

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;

Details

BSS123LT1G

Onsemi

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

Details

BAV99

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

DS18B20Z/T&R

Maxim Integrated

DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.

Details

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SS495A-SP

Honeywell Sensing And Control

SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.

Details

FDC5614P

MSKSEMI SEMICONDUCTOR

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

Details

BFR93A Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	6000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Minimum Power Gain (Gp):	13.5 dB
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Maximum Collector-Base Capacitance:	.9 pF
Maximum VCEsat:	.4 V

Category Top Products

BFQ256A-TAPE-7

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; No. of Terminals: 4;

934061142115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; Case Connection: EMITTER;

LM3146N

National Semiconductor

LM3146N by National Semiconductor is an NPN BJT with 5 elements and 14 terminals. It operates in the very high-frequency band up to 500 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 30V and max collector current of 0.05A, it offers complex configuration in a rectangular package suitable for through-hole mounting.

BF959RLRA

Onsemi

BF959RLRA by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operates at up to 150 °C, making it suitable for various RF small signal designs.

BLW32

New Jersey Semiconductor Products

NPN; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .65 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 30 V; No. of Elements: 1;

3001

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;

BFP620H7764XTSA1

Infineon Technologies

BFP620H7764XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max fT of 65 GHz, collector-emitter voltage of 2.3V, and collector current of 0.08A. Ideal for high-frequency amplifier circuits in automotive electronics due to AEC-Q101 compliance.

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

NSVF4015SG4T1G

Onsemi

NSVF4015SG4T1G by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.45W and a transition frequency of 10GHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package and operating temperature range from -55°C to 150°C.

MCH4016-TL-H

Onsemi

MCH4016-TL-H by Onsemi is a NPN RF BJT transistor with 4 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 10GHz. This small outline package with flat terminals operates up to 150°C and supports a max collector-emitter voltage of 12V.

MPSH17

Onsemi

The Onsemi MPSH17 is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pdiss of 0.625W, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.

JANTX2N2907AUB

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3;

2SC5245A-4-TL-E

Onsemi

The Onsemi 2SC5245A-4-TL-E is an NPN RF BJT with a max power dissipation of 0.15W, fT of 5000MHz, and hFE min of 60. Ideal for high-frequency applications in surface-mount configurations due to its low collector current and high operating temperature capabilities.

MPS5179G

Onsemi

MPS5179G by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it ideal for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals, suitable for high-frequency circuit designs.

55GN01CA-TB-E

Onsemi

55GN01CA-TB-E by Onsemi is an NPN BJT transistor with a max fT of 5500 MHz. It has a max IC of 0.07 A and hFE of 100, ideal for amplifier applications in C band frequencies. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for high-frequency RF designs.

SS9018GBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;

FH105A-TR-E

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

2N4261

Texas Instruments

2N4261 by Texas Instruments is a PNP BJT transistor for AMPLIFIER applications. It has a hFE of 30, VCE of 15V, and fT of 2MHz. With a max power dissipation of 0.2W, it operates in the ULTRA HIGH FREQUENCY BAND.

AT-42035G

Broadcom

AT-42035G by Broadcom is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 8 GHz and can handle a collector current of 0.08 A, making it suitable for C band amplifier applications in microwave packages.

BFU710F,115

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;