Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
352	$0.103	$36.115

NSF2250WT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NSF2250WT1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2300 MHz; Maximum Power Dissipation (Abs): .202 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

352 In Stock

Popular Products

BAT54C-7-F

Diodes Incorporated

BAT54C-7-F by Diodes Inc. is a Schottky rectifier diode with common cathode, 2 elements, and max forward voltage of 0.24V. Ideal for applications requiring fast reverse recovery time of 0.005 us, such as in small outline packages for surface mount technology at temperatures ranging from -65 to 150°C.

Details

LM107H/883

Texas Instruments

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

Details

STM32F407VGT6

STMicroelectronics

STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).

Details

LM555CM

Onsemi

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

BSS138

Inter F E T

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Details

SMBJ18CA

Hy Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M85049/85-08W02

TE Connectivity

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;

Details

LM7805CT/NOPB

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;

Details

BAV99

Plessey Semiconductors Discrete Components Div

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SS14

Zowie Technology

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

Details

1N4148

Itt Components

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

Details

LM317T

Motorola

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

E8WSDC12-32.768KTR

Ecliptek

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

Details

1N4148

Panjit International

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

Details

NSF2250WT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	2300 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.202 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	120
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Maximum Collector-Base Capacitance:	1.2 pF
Peak Reflow Temperature (C):	260

Category Top Products

D2T918

Texas Instruments

D2T918 by Texas Instruments is an NPN BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It has a min hFE of 20, max VCE of 15V, and IC of 0.05A. The package is cylindrical with 6 terminals and isolated case connection.

LM3046MX

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 15 V;

934067695115

NXP Semiconductors

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;

BFT92W

NXP Semiconductors

The NXP Semiconductors BFT92W is a PNP RF BJT transistor with a max power dissipation of 0.3 W and a transition frequency of 4000 MHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly.

2N4260

Texas Instruments

2N4260 by Texas Instruments is a PNP BJT for RF applications. With hFE of 30, it operates at 200°C with VCE of 15V and IC of 0.03A. Ideal for amplifiers in the UHF band, it has a fT of 1.6MHz and Pd max of 0.2W in a cylindrical package with isolated case connection.

BFU590QX

NXP Semiconductors

BFU590QX by NXP Semiconductors is a RF Small Signal BJT with NPN polarity, suitable for amplifier applications. It has a max fT of 8000 MHz, Vce of 12V, and Ic of 0.2A. This transistor comes in a small outline package with flat terminals and is surface mountable.

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.

BFU790F,115

NXP Semiconductors

NXP Semiconductors' BFU790F,115 is an NPN RF BJT with a max power dissipation of 0.234W and min hFE of 235. Ideal for surface mount applications, it has a max IC of 0.1A making it suitable for high-frequency signal amplification in various electronic devices.

JANTX2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Terminals: 3; Terminal Position: DUAL;

CA3083Z

Renesas Electronics

CA3083Z by Renesas Electronics is a NPN BJT with 5 elements for switching applications. It operates in the very high frequency band up to 450 MHz, with a max collector-emitter voltage of 15V and collector current of 0.1A. The package style is in-line, with a max power dissipation of 0.5W at 150°C.

UMX5NTR

ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.

2SC5245A-4-TL-E

Onsemi

The Onsemi 2SC5245A-4-TL-E is an NPN RF BJT with a max power dissipation of 0.15W, fT of 5000MHz, and hFE min of 60. Ideal for high-frequency applications in surface-mount configurations due to its low collector current and high operating temperature capabilities.

LM3146M

National Semiconductor

LM3146M by National Semiconductor is an NPN BJT transistor with a max operating temperature of 85°C and a fT of 500 MHz. It has 14 terminals, can handle up to 30V, and is used in amplifier applications for the very high-frequency band.

MMBR5031LT1

Freescale Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;

BFR93A

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

S822T

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; JESD-609 Code: e3;

BF959RLRM

Onsemi

BF959RLRM by Onsemi is a NPN RF BJT with 700MHz fT. Operating at 150 °C, it has VCE of 20V and IC of 0.1A. Ideal for very high frequency applications due to its single configuration and cylindrical package style.

LA733Q

Onsemi

LA733Q by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 1.5W, hFE of 135, and fT of 100MHz. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

2N4260

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .03 A; Qualification: Not Qualified; JEDEC-95 Code: TO-18;

AT-42035G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .08 A;