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2N3571

Manufacturer

Texas Instruments
Manufacturer's Part Number

2N3571
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

7959 In Stock

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RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

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M39029/58360

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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Details

2N3571 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	1500 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	ISOLATED
JEDEC-95 Code:	TO-72
Polarity or Channel Type:	NPN
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	15 V
Additional Features:	LOW NOISE
Maximum Collector-Base Capacitance:	.85 pF
Peak Reflow Temperature (C):	NOT SPECIFIED

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SS9018HBU by Onsemi is a NPN RF Small Signal Bipolar Junction Transistor (BJT) with a max operating temperature of 150 °C. It has a min DC current gain (hFE) of 97 and a nominal transition frequency (fT) of 1100 MHz. This transistor is commonly used in amplifier applications.

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KSC1393R

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KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.

2SC4853A-4-TL-E

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RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6;

BFU550R

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The NXP Semiconductors BFU550R is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L band. It features a max operating temperature of 150°C, a transition frequency of 11 GHz, and a collector-emitter voltage of 16V. This small outline transistor has Gull Wing terminals and can handle up to 0.05A collector current.

2N5332

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2N5332 by Texas Instruments is a PNP BJT transistor with 3 terminals, suitable for switching applications. It operates in the ultra-high frequency band up to 800 MHz, with a max collector-emitter voltage of 12V and a DC current gain of at least 20 (hFE). The package style is cylindrical, and it has a max power dissipation of 0.36W at an operating temperature of 175°C.

Bulk

2N3571

7959 In Stock

Popular Products

1N4148WT

BAV99

BAV99

B340A-13-F

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06035C104KAT2A

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LM555CMX

BSS84-7-F

2N2222A

BAV99

2N7002

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RC0603FR-0710KL

BAV99

MMSZ5245BT1G

2N3571 Technical Details

Category Top Products

2N3553

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