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BFG425W
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ManufacturerNXP Semiconductors
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Manufacturer's Part NumberBFG425W
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;
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Datasheet
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DetailsBFG425W Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 25000 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .03 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | .135 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Highest Frequency Band: | L BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | EMITTER |
Maximum Power Dissipation Ambient: | .135 W |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 50 |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 4.5 V |
Additional Features: | LOW NOISE |