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BFG21W,115

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BFG21W,115
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .67 W; Maximum Collector Current (IC): .5 A;
Datasheet

Datasheet

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BFG21W,115 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	18000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.67 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	EMITTER
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	4.5 V
Maximum Collector-Base Capacitance:	3 pF
Peak Reflow Temperature (C):	260

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