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MMBTH10-4LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

MMBTH10-4LT1G
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
Datasheet

Datasheet

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MMBTH10-4LT1G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	800 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.025 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	=MMBTH10-4LT1GOSCT-ND MMBTH10-4LT1GOSCT MMBTH10-4LT1GOSTR MMBTH104LT1G MMBTH10-4LT1G-ND =MMBTH10 MMBTH10-4LT1GOSDKR
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	120
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Maximum Collector-Base Capacitance:	.7 pF
Peak Reflow Temperature (C):	260

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