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55GN01FA
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ManufacturerOnsemi
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Manufacturer's Part Number55GN01FA
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DescriptionNPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A;
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Datasheet
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Details55GN01FA Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 5500 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .07 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | NPN |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 100 |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .25 W |
Maximum Collector-Emitter Voltage: | 10 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
Maximum Collector-Base Capacitance: | 1.2 pF |