Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,113	$0.291	$614.249

FH102A-TR-E

Manufacturer

Onsemi
Manufacturer's Part Number

FH102A-TR-E
Description

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .07 A; JESD-609 Code: e6;
Datasheet

Datasheet

2113 In Stock

Popular Products

BAV99

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1552200168

Molex

WIRE AND CABLE;

Details

LM358MX

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

1N4148W-T

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Won-top Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

M39029/58-360

Carlisle Interconnect Technologies

GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;

Details

LL4148

Goodwork Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

RC0402FR-0710KL

Yageo

Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.

Details

LM317T

Linear Technology

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;

Details

SS14

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

Details

2N7002

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

Details

1N4148

Vicor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

MURS160T3G

Onsemi

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

Details

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MBR0520LT1

Motorola

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM107H

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

RC0603JR-070RL

Yageo

Yageo's RC0603JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. Its metal glaze/thick film technology and 0.1 W power dissipation make it ideal for jumper applications in various electronic devices.

Details

1N4148

Formosa Microsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

GRM155R71H103KA88D

Murata Manufacturing

The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.

Details

FH102A-TR-E Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	5000 MHz
Maximum Collector Current (IC):	.07 A
Maximum Time At Peak Reflow Temperature (s):	30
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	90
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
Maximum Power Dissipation (Abs):	.5 W
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Category Top Products

934055891115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Transistor Element Material: SILICON;

15GN01MA-TL-E

Onsemi

The Onsemi 15GN01MA-TL-E is an NPN RF BJT with a max power dissipation of 0.4W, hFE of 200, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.05A in surface-mount configurations at temperatures up to 150 °C.

BFR520

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;

934063142215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;

KSC1674R

Onsemi

KSC1674R by Onsemi is an NPN BJT transistor for RF applications. It features a low VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for amplifiers in the ultra-high frequency band with a max operating temp of 150 °C.

BFR380FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

TIS125

Texas Instruments

TIS125 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 30, and fT of 450MHz. It is used in RF applications due to its very high frequency band capability, operating at up to 150°C with a VCE max of 30V.

2N2907AUA

Vpt Components

RF Small Signal Bipolar Transistors;

934067711235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;

SMMBTH10-4LT3G

Onsemi

SMMBTH10-4LT3G by Onsemi is an NPN RF BJT with 120 min hFE and 800 MHz fT. It has a 0.3W power dissipation, operates up to 150°C, and is suitable for surface mount applications in RF circuits.

SD1134

STMicroelectronics

SD1134 by STMicroelectronics is an NPN RF BJT transistor with a max power dissipation of 5W and max collector current of 0.75A. It operates in the ultra-high frequency band, suitable for applications requiring high-frequency signal amplification in radial terminal configurations.

CA3083M

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

15GN03MA-TL-E

Onsemi

15GN03MA-TL-E by Onsemi is a NPN RF BJT with 0.4W power dissipation, hFE of 100, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.07A in surface-mount configurations at temperatures up to 150°C.

BFP182WH6327XTSA1

Infineon Technologies

BFP182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.035A. Ideal for amplifier circuits due to its high transition frequency and low collector-base capacitance.

PN5179D26Z

Fairchild Semiconductor

Fairchild Semiconductor's PN5179D26Z is an NPN BJT transistor with a max collector-emitter voltage of 12V and a transition frequency of 900MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max power dissipation of 0.6W. The package style is cylindrical with a matte tin terminal finish, suitable for through-hole mounting at temperatures up to 150°C.

BFU550WX

NXP Semiconductors

The NXP Semiconductors BFU550WX is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max collector-emitter voltage of 12V, fT of 11GHz, and can handle a max collector current of 0.05A.

BF494

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;

2N5109

Baneasa S A

RF Small Signal Bipolar Transistors; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-39; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND;

BFS17PE6433

Infineon Technologies

The Infineon Technologies BFS17PE6433 is an NPN RF BJT transistor for ultra-high frequency band applications. With a max operating temp of 150°C, it offers a transition frequency of 2500 MHz and a collector-emitter voltage of 15V. Ideal for amplifier circuits, this transistor has a small outline package with gull wing terminals.

AT-42035G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .08 A;